A. Long

发表

GdGaO: A gate dielectric for GaAs metal-oxide-semiconductor field-effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

A co-evaporation control system for two-component alloys

A. Macleod, A. Long, 1979 .

The scattering of phonons in thin films of amorphous silica

A. C. Hanna, A. Macleod, A. Long, 1986 .

MEASUREMENTS OF THE LIFETIME OF EXCITATIONS IN SUPERCONDUCTING ALUMINIUM.

K. Gray, C. J. Adkins, A. Long, 1969 .

The attenuation of high frequency phonons in metals

A. Long, 1973 .

Transfer characteristics of phonon coupled superconducting tunnel junctions

C. J. Adkins, A. Long, 1973 .

Energy transfer from solids to helium vapor by the desorption of surface-bound atoms

A. Long, 1974 .

Phonon reflection at a cleaved sodium fluoride-helium film interface

A. Long, A. Wyatt, R. Sherlock, 1974 .

Tunnel junction investigations of superflow in thin helium-4 films

A. Long, 1975 .

Proceedings of the 26th International Conference on the Physics of Semiconductors

John H. Davies, Ar Long, A. Long, 2003 .

Physics of semiconductors 2002 : proceedings of the 26th International Conference on the Physics of Semiconductors held in Edinburgh, UK, 29 July-2 August 2002

A. Long, J. Davies, 2003 .

Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors

R. Oxland, F. Rahman, A. Long, 2009 .

Using surface and magnetotransport effects for magnetic field sensing in ferromagnet-bipolar hybrid sensors

R. Oxland, G. Paterson, F. Rahman, 2010 .

Indium Phosphide Heterojunction Bipolar Transistors as Magnetic Field Sensors

R. Oxland, G. Paterson, F. Rahman, 2011, IEEE Transactions on Electron Devices.

Hopping and related phenomena 5 : Proceedings of the 5th International Conference on Hopping and Related Phenomena, Glasgow, Scotland, UK, 31 August - 3 September 1993

J. Mcinnes, C. J. Adkins, A. Long, 1994 .

Ga2O3 grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

M. Holland, C. Stanley, I. Thayne, 2007 .

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

M. Holland, P. McIntyre, I. Thayne, 2012 .

Modeling and analysis of the admittance characteristics of n+ metal-oxide-semiconductor capacitors with oxide and interface states - Gd0.25Ga0.15O0.6/Ga2O3 on In0.53Ga0.47As

M. Holland, I. Thayne, G. Paterson, 2012 .

Electrical characteristics of gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As in metal-oxide-semiconductor field effect transistors - admittance and subthreshold characteristics

M. Holland, I. Thayne, S. Bentley, 2011 .

Gadolinium gallium oxide/gallium oxide insulators on GaAs and In0.53Ga0.47As n+ MOS capacitors: The interface state model and beyond

M. Holland, I. Thayne, S. Bentley, 2011 .

Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses

M. Holland, I. Thayne, G. Paterson, 2011 .

Phonon generation using thin film transducers

A. Long, 1973 .

The quantitative determination of phonon energy spectra using superconducting heterojunctions

A. C. Hanna, A. Macleod, A. Long, 1983 .