D. Deen

发表

Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures

K. Evans, D. Katzer, S. Binari, 2010 .

Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors

A. Osinsky, D. Deen, Ross Miller, 2014 .

MBE-Grown Ultra-shallow AlN/GaN HFET Technology

Yu Cao, D. Jena, H. Xing, 2007 .

Self-aligned ALD AlOx T-gate footprint insulator for gate leakage current suppression in SiNx passivated AlGaN/GaN HEMTs

D. Katzer, S. Binari, C. Eddy, 2009, 2009 International Semiconductor Device Research Symposium.

Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs

Yu Cao, D. Jena, H. Xing, 2008 .

Graphene-Based Quantum Capacitance Wireless Vapor Sensors

S. Koester, E. Olson, M. Ebrish, 2013, IEEE Sensors Journal.

AlN/GaN HEMTs with high‐κ ALD HfO2 or Ta2O5 gate insulation

T. Gougousi, D. Katzer, S. Binari, 2011 .

Current focusing in InSb heterostructures

N. Goel, M. Santos, Y. Hirayama, 2006 .

Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

Robert Bass, David J. Meyer, David F. Storm, 2014 .

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

David J. Smith, K. Evans, T. Gougousi, 2013 .

High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates

D. J. Meyer, J. A. Roussos, M. G. Ancona, 2013, IEEE Electron Device Letters.

Scaling of the Nonlocal Spin and Baseline Resistances in Graphene Lateral Spin Valves

S. Koester, P. Crowell, Qun Su, 2019, IEEE Transactions on Electron Devices.

Highly sensitive micro-Hall devices based on Al0.12In0.88Sb∕InSb heterostructures

Tetsuya D. Mishima, Gregory J. Salamo, D. Guzun, 2005 .

AC Small-Signal Model for Magnetoresistive Lateral Spin Valves

S. Koester, Jiaxi Hu, D. Deen, 2019, IEEE Transactions on Magnetics.

A Race-Track Trapped-Ion Quantum Processor

B. Bjork, C. Figgatt, B. Neyenhuis, 2023, Physical Review X.

Pinning-induced pn junction formation in low-bandgap two-dimensional semiconducting systems

D. Deen, 2015, 1509.00250.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

D. Katzer, R. Bass, D. Meyer, 2015, 1508.07794.

AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

Yu Cao, D. Jena, P. Fay, 2008, IEEE Electron Device Letters.

High frequency capacitance-voltage technique for the extraction of interface trap density of the heterojunction capacitor: Terman’s method revised

J. Champlain, D. Deen, 2011 .

Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors

T. Gougousi, D. Katzer, S. Binari, 2011 .

Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs

Robert Bass, David J. Meyer, Charles R. Eddy, 2010, DRC 2010.

Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures

David J. Meyer, David F. Storm, Steven C. Binari, 2010 .

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

D. Katzer, A. Osinsky, B. Downey, 2016, 1610.03921.