T. Arai

Proposal of buried metal heterojunction bipolar transistor and fabrication of HBT with buried tungsten

M. Suhara, Y. Miyamoto, K. Furuya, 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

InP DHBT with 0.5mum Wide Emitter along Direction toward BM-HBT with Narrow Emitter

Y. Miyamoto, K. Furuya, S. Yamagami, 2001 .

InP DHBT with 0 . 5 μ m Wide Emitter along 〈 010 〉 Direction toward BM-HBT with Narrow Emitter

Y. Miyamoto, K. Furuya, S. Yamagami, 2001 .

C/sub BC/ reduction in GaInAs/InP buried metal heterojunction bipolar transistor

Y. Miyamoto, K. Furuya, S. Yamagami, 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

First Fabrication of GaInAs/InP Buried Metal Heterojunction Bipolar Transistor and Reduction of Base-Collector Capacitance

Y. Miyamoto, K. Furuya, S. Yamagami, 2000 .

Sub-micron GaInAs/InP hot electron transistors by EBL process and size dependence of current gain

T. Hattori, Y. Miyamoto, K. Furuya, 1998 .

Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors with Buried Tungsten Wires

Y. Miyamoto, K. Furuya, S. Yamagami, 2001 .