R. Bauer

发表

Correlation of time‐resolved electroluminescence and cathodoluminescence measurements on quantum well light emitters with varying barrier widths

C. Harder, D. Bimberg, H. Meier, 1991 .

Structural changes of the interface, enhanced interface incorporation of acceptors, and luminescence efficiency degradation in GaAs quantum wells grown by molecular beam epitaxy upon growth interruption

D. Bimberg, D. Mars, Jeffrey N. Miller, 1986 .

High‐precision band‐gap determination of Al0.48In0.52As with optical and structural methods

D. Bimberg, K. Carey, R. Bauer, 1989 .

Cap and capless annealing of Fe‐implanted InGaAs

D. Bimberg, K. Wandel, B. Gruska, 1993 .

Impact of MBE-growth rate on optical properties of AlGaAs/GaAs quantum well structures

C. Maierhofer, D. Bimberg, Jeffrey N. Miller, 1989 .

ROTATIONAL CONSTANTS AND ELECTRIC DIPOLE MOMENT OF NaF

H. Lew, R. Bauer, 1963 .

Surface photochemistry. The effects of coadsorbed molecules on pyrene luminescence and acenaphthylene dimerization on silica gel

W. Ware, K. Okada, P. D. Mayo, 1983 .

Surface photochemistry. The photophysics of pyrene adsorbed on silica gel, alumina, and calcium fluoride

W. Ware, P. D. Mayo, R. Bauer, 1982 .

Surface photochemistry: translational motion of organic molecules adsorbed on silica gel and its consequences

W. Ware, K. Okada, P. D. Mayo, 1982 .

Performance characteristics of a small side‐window photomultiplier in laser single‐photon fluorescence decay measurements

William R. Ware, W. Ware, Madhuri Pratinidhi, 1983 .

A method of avoiding wavelength-dependent errors in decay-time measurements

A. Balter, R. Bauer, 1979 .

SUPPLEMENTARY NOTE TO "ROTATIONAL CONSTANTS AND ELECTRIC DIPOLE MOMENT OF NaF"

H. Lew, R. Bauer, 1964 .

Migration of electronic energy from chlorophyll b to chlorophyll a in solutions.

L. Szalay, R. Bauer, E. Tombácz, 1972, Biophysical journal.

Surface photochemistry: the effect of surface modification on the photophysics of naphthalene and pyrene adsorbed on silica gel'

L. Natarajan, W. Ware, R. Bauer, 1984 .

Recombination of carriers confined at In0.53Ga0.47As/InP and In0.75Ga0.25As0.5P0.5/InP interfaces

Manijeh Razeghi, Dieter Bimberg, M. Razeghi, 1985 .

Further development of an accurate method for measurements of the polarization of light

R. Bauer, 1970 .

Enhancement of nonradiative interface recombination in GaAs coupled quantum wells

D. Bimberg, D. Mars, Jeffrey N. Miller, 1990 .

First observation of a titanium midgap donor level in In0.53Ga0.47As p‐n diodes

D. Bimberg, Z. Chen, R. Bauer, 1989 .

Study of radiative recombination efficiency in 28–180‐Å‐wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

Z. Alferov, D. Bimberg, V. Khalfin, 1994 .

Kinetics of island formation at the interfaces of AlGaAs/GaAs/AlGaAs quantum wells upon growth interruption

D. Bimberg, D. Mars, J. Christen, 1987 .

Tea nitrogen subnanosecond laser

A. Kowalczyk, R. Bauer, 1977 .

Binary AlAs/GaAs versus ternary GaAlAs/GaAs interfaces : a dramatic difference of perfection

D. Gerthsen, D. Bimberg, F. Heinrichsdorff, 1992 .

Donor fluorescence decay in the rhodamine 6G-malachite green system in the presence of energy migration

R. Bauer, R. Twardowski, 1982 .

NONCOMMUTATIVE STRUCTURE OF GaAs QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPORATION

D. Bimberg, D. Mars, J. Miller, 1987 .

Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes

Dieter Bimberg, Robert Hull, Shih-Yuan Wang, 1986 .