T. Yokogawa

发表

Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique

M. Kitabatake, M. Uchida, Kunimasa Takahashi, 2002 .

Excitonic and time-resolved edge emissions of iodine-doped cubic ZnS crystals excited by an excimer laser

T. Taguchi, H. Yamashita, T. Yokogawa, 1984 .

ZnTe/ZnSTe doping superlattices grown on InP substrates by metalorganic vapor phase epitaxy

T. Narusawa, T. Yokogawa, 1992 .

Growth of ZnSe/ZnS strained‐layer superlattices on Si substrates

M. Ogura, Hisanao Sato, T. Yokogawa, 1988 .

Effect of misfit dislocations on luminescence in m-plane InGaN quantum wells

K. Sun, F. Ponce, A. Fischer, 2011 .

Spatial Inhomogeneity of Aluminum Content in Air-Bridged Lateral Epitaxially Grown AlGaN Ternary Alloy Films Probed by Cross-Sectional Scanning Near-Field Optical Microscopy

A. Ishibashi, Hideaki Murotani, T. Yokogawa, 2012 .

Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growth

Y. Kawaguchi, A. Ishibashi, G. Sugahara, 2003 .

Effects of electric field on ZnSe/ZnS strained-layer superlattices

T. Narusawa, T. Yokogawa, T. Saitoh, 1990 .

Raman and photoluminescence investigations of ZnSe-ZnS strained-layer superlattices

M. Ogura, O. Matsuda, K. Murase, 1988 .

Dependence of elastic strain on thickness for ZnSe films grown on lattice‐mismatched materials

M. Ogura, Hisanao Sato, T. Yokogawa, 1988 .

ZnSe/ZnS heteroepitaxial growth using an intermediate strained-layer superlattice buffer

M. Ogura, T. Kajiwara, T. Yokogawa, 1987 .

Microarea Strain Analysis in InGaN/GaN Multiple Quantum Wells on m-Plane Using High-Resolution Microbeam X-ray Diffraction

Y. Imai, S. Kimura, S. Yoshida, 2013 .

Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure

O. Sakata, Y. Imai, S. Kimura, 2011 .

High quality ZnSe films grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

M. Ogura, T. Kajiwara, T. Yokogawa, 1987 .

Effects of oxygen impurity on the surface in ZnS crystals and blue light-emitting diodes

T. Taguchi, T. Yokogawa, 1984 .

Nitrogen delta doping in 6H silicon carbide layers

M. Kitabatake, M. Uchida, T. Uenoyama, 2001 .

Electronic Properties of Nitrogen Delta-Doped Silicon Carbide Layers

M. Kitabatake, M. Uchida, T. Uenoyama, 2000 .

Low-loss MOVPE-grown ZnSeZnS superlattice optical waveguide

M. Ogura, T. Fujita, T. Kajiwara, 1988 .

Room-Temperature Plasticity of a Nanosized GaN Crystal

S. Nagao, R. Nowak, M. Fujikane, 2021, Nano letters.

Spectroscopic characterization of band discontinuity in free‐standing CdZnS/ZnS strained layer superlattices

J. Merz, T. Taguchi, T. Ishikawa, 1994 .

Compound source molecular beam epitaxy for II–VI laser structures

T. Nishikawa, Y. Sasai, S. Yoshii, 1996 .

Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers

J. Merz, Y. Sasai, S. Yoshii, 1995 .

Optical confinement in ZnSe-based quantum well structure using impurity induced disordering

J. Merz, H. Luo, J. Furdyna, 1994 .

CdZnSe/ZnSe strained layer superlattices disordered by germanium diffusion

J. Merz, H. Luo, J. Furdyna, 1994 .

Disordering induced by impurity diffusion in ZnSe‐based superlattices and optical waveguides fabricated by disordering

J. Merz, H. Luo, J. Furdyna, 1993 .

Ultraviolet biexcitonic emission from AlGaN ternary alloys

T. Yokogawa, Y. Yamada, 2011 .

Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers

Tsunemasa Taguchi, Hideaki Murotani, T. Taguchi, 2008 .

Biexciton luminescence from AlxGa1-xN epitaxial layers

T. Taguchi, Y. Ueki, Y. Kawaguchi, 2004 .

Recent Results on ZnSe-Based Vertical-Cavity Surface Emitting Lasers Operating in the Blue

J. Merz, H. Luo, J. Furdyna, 1995 .

ZnSe‐ZnS strained‐layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

M. Ogura, T. Kajiwara, T. Yokogawa, 1986 .

Intense blue-emission band and the fabrication of blue light emitting diodes in I-doped and Ag-ion-implanted cubic ZnS

T. Taguchi, S. Fujita, T. Yokogawa, 1983, IEEE Transactions on Electron Devices.

Low‐loss short‐wavelength optical waveguides using ZnSe‐ZnS strained‐layer superlattices

M. Ogura, T. Kajiwara, T. Yokogawa, 1988 .

Optical characterization of ZnSe/ZnS strained‐layer superlattices grown on CaF2 substrates

T. Narusawa, T. Yokogawa, T. Saitoh, 1991 .

Defect creation and doping of p-type impurities in ZnS crystals

T. Taguchi, S. Fujita, Y. Inuishi, 1983 .

Impurity induced disordering of CdZnSe/ZnSe strained layer superlattices by germanium diffusion

J. Merz, H. Luo, J. Furdyna, 1993 .

Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Ion Implantation

J. Merz, S. Lau, D. Bimberg, 1995 .

DISORDER OF ZNSE/ZNS STRAINED-LAYER SUPERLATTICES BY N+ OR LI+ ION IMPLANTATION AND LOW-TEMPERATURE ANNEALING

T. Narusawa, T. Yokogawa, T. Saitoh, 1991 .

Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure

S. Kamiyama, S. Yoshii, K. Ohkawa, 1996 .

ZnSe/ZnS strained layer superlattices grown on CaF2 substrates by MOVPE

T. Narusawa, T. Yokogawa, 1991 .

A High Power InGaN‐LED on an m‐Plane GaN Substrate

M. Fujikane, T. Yokogawa, Mitsuaki Oya, 2015 .

Low Contact Resistance P-Type Electrode for Nonpolar m-Plane GaN

T. Yokogawa, Mitsuaki Oya, 2013 .

Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl2 electron cyclotron resonance plasma

Tohru Saitoh, Tadashi Narusawa, T. Narusawa, 1990 .

Low contact resistance of the MWCNTs ohmic contact to p-GaN and its application for high power LED

Toshiya Yokogawa, Syota Miyake, T. Yokogawa, 2017, NanoScience + Engineering.

Carbon Nanotube and GaN Hetero-Interface: Electrical Property and Band-Structure

T. Yokogawa, 2014 .

Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

S. Nagao, R. Nowak, M. Fujikane, 2013 .

Nanoindentation study on insight of plasticity related to dislocation density and crystal orientation in GaN

S. Nagao, R. Nowak, M. Fujikane, 2012 .

Mechanical and Optical Properties Characterization of C-Plane (0001) and M-Plane (10−10) GaN by Nanoindentation and Luminescence

S. Nagao, R. Nowak, M. Fujikane, 2015 .

Yield shear stress dependence on nanoindentation strain rate in bulk GaN crystal

S. Nagao, R. Nowak, M. Fujikane, 2011 .

Localization-induced inhomogeneous screening of internal electric fields in AlGaN-based quantum wells

Tsunemasa Taguchi, Hideaki Murotani, Takuya Saito, 2007 .

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

R. Dutton, H. Tsuchiya, Yang Liu, 2014 .

High Power InGaN-LED on m-plane GaN Substrate

Toshiya Yokogawa, Mitsuaki Oya, Masaki Fujikane, 2013 .

Role of the buffer layer thickness on the formation of basal plane stacking faults in a-plane GaN epitaxy on r-sapphire

F. Ponce, A. Fischer, S. Yoshida, 2008 .

Stokes shift of biexcitons inAlxGa1−xNepitaxial layers

T. Taguchi, Y. Ueki, Y. Kawaguchi, 2004 .

Nonlinear optical properties and blue-light-emitting diode of ZnSe/ZnS and ZnTe/ZnS strained-layer superlattices

T. Yokogawa, 1993 .

Electroluminescence in p‐n junction using p‐ZnTe/ZnS doping superlattices

T. Narusawa, T. Yokogawa, 1992 .

p-n blue light emitting diodes using p-ZnTe/ZnS doping superlattices

T. Narusawa, T. Yokogawa, 1991, International Electron Devices Meeting 1991 [Technical Digest].