K. Nakai

发表

Characterization of defects in β-Ga2O3 single crystals

Toshiro Futagi, K. Noami, K. Nakai, 2015 .

Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals

J. Takahashi, Y. Ohta, K. Nakai, 2001 .

Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometer

M. Hasebe, K. Nakai, W. Ohashi, 2000 .

Defect Control in Nitrogen Doped Czochralski Silicon Crystals

T. Hoshino, N. Masahashi, Y. Ohta, 1999 .

Investigation of Ostwald ripening in nitrogen doped Czochralski silicon

H. Richter, W. Ammon, A. Huber, 2005 .

Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals

J. Takahashi, K. Kawakami, K. Nakai, 2003 .

Effect of void shape in Czochralski-Si wafers on the intensity of laser-scattering

J. Takahashi, K. Kawakami, K. Nakai, 2001 .

Shear Strength Prediction of Steel-Concrete Sandwich Beams

T. Ueda, Y. Kakuta, H. Furuuchi, 1997 .

Crystal Defects in Epitaxial Layer on Nitrogen-doped Czochralski-grown Silicon Substrate (II) –Suppression of the Crystal Defects in Epitaxial Layer by the Control of Crystal Growth Condition and Carbon Co-doping–

Masahiro Tanaka, Y. Ohta, K. Nakai, 2004 .