J.M. Ford

AC floating-body effects in submicron fully depleted (FD) SOI nMOSFETs and the impact on analog applications

J.C.S. Woo, Ying-Che Tseng, W.M. Huang, 1998, IEEE Electron Device Letters.

1/f noise in graded-channel MOSFETs for low-power low-cost RFICs

E. Spears, D. Ngo, J.M. Ford, 1997, 1997 55th Annual Device Research Conference Digest.

Characterization of the inverse-narrow-width effect

J.M. Ford, M. Sugino, J. Ford, 1987, IEEE Transactions on Electron Devices.

Low-frequency noise dependence of TFSOI BiCMOS for low power RF mixed-mode applications

D. Ngo, W.M. Huang, J.M. Ford, 1996, International Electron Devices Meeting. Technical Digest.

Comparison of time-to-failure of GeSi and Si bipolar transistors

J.M. Ford, A. Neugroschel, Chih-Tang Sah, 1996, IEEE Electron Device Letters.

Empirical correlation between AC kink and low-frequency noise overshoot in SOI MOSFETs

Ying-Che Tseng, J.M. Ford, J. Woo, 1998, IEEE Electron Device Letters.