D. Mohata

Scaling Length Theory of Double-Gate Interband Tunnel Field-Effect Transistors

Lu Liu, S. Datta, D. Mohata, 2012, IEEE Transactions on Electron Devices.

Tunnel transistors for energy efficient computing

S. Datta, D. Mohata, V. Narayanan, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

Insight into the output characteristics of III-V tunneling field effect transistors

Suman Datta, D. Mohata, S. Datta, 2013 .

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Suman Datta, Mantu K. Hudait, Dmitri Lubyshev, 2012 .

Full Band Atomistic Modeling of Homo-junction InGaAs Band-to-Band Tunneling Diodes Including Band Gap Narrowing

Suman Datta, Gerhard Klimeck, Mathieu Luisier, 2012 .

High speed devices

P. Asbeck, S. Mookerjea, D. Ritter, 2010, 68th Device Research Conference.

Temperature-Dependent $I$ – $V$ Characteristics of a Vertical $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$

Suman Datta, Theresa S. Mayer, S. Mookerjea, 2010 .

Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

S. Datta, J. M. Fastenau, C. A. Richter, 2013, 2013 IEEE International Electron Devices Meeting.