T. T. Tuan

发表

Temperature dependence of electrical characteristics of n-InxGa1 − xN/p-Si hetero-junctions made totally by RF magnetron sputtering

D. Kuo, T. T. Tuan, Kaifan Lin, 2015 .

Force Analysis Model for Elastomer CMP Pad by Diamond Tool

Chao-Chang A. Chen, Q. Pham, Ajay Gupta, 2019 .

Investigating N solubility in the host lattice of p-type Al- and N- co-doped SnO2 films with various N2 contents in sputtering gas

Nguyen Van Sau, H. Dang, A. Duong, 2020 .

Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

D. Kuo, T. T. Tuan, 2015 .

Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105

D. Kuo, T. T. Tuan, Guan-zhang Li, 2017 .

The Effect of RF Sputtering Temperature Conditions on the Structural and Physical Properties of Grown SbGaN Thin Film

D. Kuo, T. T. Tuan, Cao Phương Thảo, 2021, Coatings.

Reactively Sputtered Sb-GaN Films and its Hetero-Junction Diode: The Exploration of the n-to-p Transition

D. Kuo, W. Ke, T. T. Tuan, 2020, Coatings.

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

D. Kuo, Q. Pham, T. T. Tuan, 2019, Coatings.

Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20 V

D. Kuo, T. T. Tuan, 2015 .

Electrical and structural properties of Mg-doped InxGa1−xN (x ≤ 0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

D. Kuo, T. T. Tuan, Cheng-Che Li, 2015 .

Schottky barrier characteristics of Pt contacts to all sputtering-made n-type GaN and MOS diodes

D. Kuo, T. T. Tuan, Cheng-Che Li, 2014, Journal of Materials Science: Materials in Electronics.

Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

D. Kuo, T. T. Tuan, Cheng-Che Li, 2014, Journal of Electronic Materials.

The Effect of RF Sputtering Conditions on the Physical Characteristics of Deposited GeGaN Thin Film

Nguyen Van Sau, Na, D. Kuo, 2019, Coatings.

Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron Sputtering

D. Kuo, T. T. Tuan, Guan-zhang Li, 2015 .

Fully Sputtered n–AlInGaN/p–Mg-InxGa1−xN (x ≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range

D. Kuo, T. T. Tuan, Nguyen Van Sau, 2022, Journal of Electronic Materials.

Thin film solar cell based on p-CuSbS2 together with Cd-free GaN/InGaN bilayer

D. Kuo, T. T. Tuan, Albert Daniel Saragih, 2017, Journal of Materials Science: Materials in Electronics.

Preparation of CuSbS2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n-Type InGaN as a Substitute of ZnO

D. Kuo, Wei‐Liang Chen, T. T. Tuan, 2015, Journal of Electronic Materials.