Guan-zhang Li

Temperature dependence of electrical characteristics of n-InxGa1 − xN/p-Si hetero-junctions made totally by RF magnetron sputtering

D. Kuo, T. T. Tuan, Kaifan Lin, 2015 .

Low‐phase noise 8.22 GHz GaN HEMT oscillator using a feedback multi‐path transformer

S. Jang, J. Hou, Guan-zhang Li, 2018, Microwave and Optical Technology Letters.

Electrical properties of RF-sputtered Zn-doped GaN films and p-Zn-GaN/n-Si hetero junction diode with low leakage current of 10−9 A and a high rectification ratio above 105

D. Kuo, T. T. Tuan, Guan-zhang Li, 2017 .

Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron Sputtering

D. Kuo, T. T. Tuan, Guan-zhang Li, 2015 .