G. M. Gusinskii

Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films

E. Terukov, W. Fuhs, G. Weiser, 1998 .

Study of CdTe etching process in alcoholic solutions of bromine

A. Shchukarev, I. Kotina, G. V. Patsekina, 1998 .

A method for investigation of light-element distribution in the surface layers of semiconductors and dielectrics

I. Kudryavtsev, V. Naidenov, V. Kudoyarova, 1992 .

Visualization of the ion projected range region in GaAs irradiated with argon ions

E. Portnoi, G. Venus, S. Troshkov, 2000 .

Strongly compensated InAs obtained by proton irradiation

N. Zotova, S. Karandashev, B. Matveev, 2004 .