X. Zhang

发表

Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE

D. W. Pashley, K. Barnham, R. Droopad, 1989 .

A transmission electron microscopy and reflection high-energy electron diffraction study of the initial stages of the heteroepitaxial growth of InSb on GaAs (001) by molecular beam epitaxy

D. W. Pashley, R. Droopad, R. Newman, 1990 .

Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb

J. M. Zhang, Hong Gu, W. Tian, 2020, Physical Review B.

The growth of (InGa)As quantum wells on GaAs(111)A, (211)A and (311)A substrates

P. Vaccaro, B. Joyce, T. Watanabe, 1997 .

MBE growth of lattice-matched and mismatched films on non-(001) GaAs substrates

P. Vaccaro, B. Joyce, T. Watanabe, 1997 .

A comparison of strain relief behaviour of Inx Ga1− xAs alloy on GaAs (001) and (110) substrates

D. W. Pashley, X. Zhang, 1996 .

The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy

D. W. Pashley, B. Joyce, J. Neave, 1993 .

A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength

W. Wang, Zhongyuan Liu, Guangheng Wu, 2013, 1310.4696.

Prediction of topological insulating behavior in Hg2CuTi-type Heusler compounds from first principles

W. Wang, E. Liu, G. Liu, 2012, 1211.0190.

Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films

B. Joyce, J. Zhang, J. Neave, 1993 .

Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

T. Thornton, B. Joyce, J. M. Fernández, 1995 .

Giant magnetocaloric effect in isostructural MnNiGe-CoNiGe system by establishing a Curie-temperature window

J. L. Chen, W. Wang, H. Zhang, 2013, 1303.7282.

Quantum oscillations and quasilinear magnetoresistance in the topological semimetal candidate ScSn2

X. Shen, L. Zhang, S. Cong, 2021, Physical Review B.

Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate erbium monobismuthide

L. Zhang, X. Jiang, B. Qian, 2020, 2009.08050.

Dynamics of antiferromagnetic skyrmions in the absence or presence of pinning defects

W. H. Li, Z. Fan, Xubing Lu, 2020, 2007.14562.

Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates

W. Wang, H. Zhang, E. Liu, 2014, 1408.1547.

Long-lived ultrafast spin precession in manganese alloys films with a large perpendicular magnetic anisotropy.

T. Miyazaki, M. Oogane, T. Miyazaki, 2011, Physical review letters.

Phase transitions in the classical exchange-anisotropic Kitaev-Heisenberg model.

Z. Fan, Xubing Lu, Deyang Chen, 2020, Physical review. E.

Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates

J. Zhao, H. L. Wang, X. Zhang, 2018, Chinese Physics Letters.

Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: hydrogen coverage and interfacial abruptness

B. Joyce, M. Xie, L. Hart, 1996 .

Mechanisms of layer growth during molecular beam epitaxy of semiconductor films

B. Joyce, I. Kamiya, J. Neave, 1995 .

A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy

D. W. Pashley, A. Staton-bevan, X. Zhang, 1990 .

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, B. A. Joyce, J. L. Sudijono, 1997 .

SURFACE CONTRAST IN TWO DIMENSIONALLY NUCLEATED MISFIT DISLOCATIONS IN INAS/GAAS(110) HETEROEPITAXY

J. Sudijono, B. Joyce, T. Jones, 1997 .

Structural and magnetic properties of cubic and tetragonal Heusler alloy bilayers

T. Miyazaki, S. Mizukami, Y. Ando, 2016 .

Magnetoresistance Enhancement in Mn$_{\rm x}$Ga$_{100 - {\rm x}}$/MgO/CoFeB Perpendicular Magnetic Tunnel Junctions by Using CoFeB Interlayer

M. Oogane, T. Miyazaki, T. Kubota, 2013, IEEE Transactions on Magnetics.

Annealing Temperature and Co Layer Thickness Dependence of Magnetoresistance Effect for $L1_{0}$-MnGa/Co/MgO/CoFeB Perpendicular Magnetic Tunnel Junctions

M. Oogane, T. Miyazaki, T. Kubota, 2012, IEEE Transactions on Magnetics.

Crossover of magnetoresistance in the zero-gap half-metallic Heusler alloy Fe2CoSi

W. Wang, Z. Y. Liu, X. Zhang, 2013, 1304.3517.

Reflection high‐energy electron diffraction and optical measurements on the molecular‐beam epitaxial growth of one and two monolayers of InAs on GaAs

Ray Murray, B. A. Joyce, S. S. Dosanjh, 1992 .

Tunable ferromagnetic and antiferromagnetic interfacial exchange coupling in perpendicularly magnetized L10-MnGa/Co2FeAl Heusler bilayers

T. Miyazaki, S. Mizukami, Q. Ma, 2014 .

Abrupt transition from ferromagnetic to antiferromagnetic of interfacial exchange in perpendicularly magnetized L1(0)-MnGa/FeCo tuned by Fermi level position.

T. Miyazaki, S. Mizukami, Y. Ando, 2014, Physical Review Letters.

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

B. Joyce, G. Parry, N. Anwar, 1995 .

Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy

T. Thornton, B. Joyce, J. Zhang, 1995 .

A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes

Hiroshi Yamaguchi, Dimitri D. Vvedensky, B. A. Joyce, 1997 .

Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model

P. Ye, Weida Hu, W. Lu, 2007 .

Ultrafast domain wall motion in ferrimagnets induced by magnetic anisotropy gradient

W. H. Li, M. Qin, X. Zhang, 2019, Physical Review B.

Artificially engineered Heusler ferrimagnetic superlattice exhibiting perpendicular magnetic anisotropy

T. Miyazaki, S. Mizukami, Q. Ma, 2015, Scientific Reports.

Epitaxial growth mode and silicon/silicon-germanium heterointerfaces

B. Joyce, J. Zhang, L. Hart, 1996 .

Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4

B. Joyce, N. Ohtani, M. Xie, 1993 .

Reflection high-energy electron diffraction/transmission electron microscopy observation of growth of InAs on GaAs (110) by molecular beam epitaxy

D. W. Pashley, B. Joyce, J. Neave, 1993 .

The nucleation and growth by molecular beam epitaxy of InAs on GaAs (110) misoriented substrates

D. W. Pashley, B. Joyce, I. Kamiya, 1995 .

Interface structure of InAs grown on GaAs(001) surfaces by molecular beam epitaxy

D. W. Pashley, B. Joyce, P. Fawcett, 1992 .

Time-Resolved Kerr Effect in Very Thin Films of CoCrPt Alloys

M. Oogane, T. Miyazaki, T. Kubota, 2011, IEEE Transactions on Magnetics.

Perpendicularly magnetized ferrimagnetic [Mn50Ga50/Co2FeAl] superlattice and the utilization in magnetic tunnel junctions

T. Miyazaki, S. Mizukami, X. Zhang, 2015 .

Interfacial exchange coupling in cubic Heusler Co2FeZ (Z = Al and Si)/tetragonal Mn3Ga bilayers

T. Miyazaki, S. Mizukami, Y. Ando, 2015 .

Magnetic tunnel junctions of perpendicularly magnetized L10-MnGa/Fe/MgO/CoFe structures: Fe-layer-thickness dependences of magnetoresistance effect and tunnelling conductance spectra

T. Miyazaki, S. Mizukami, Y. Ando, 2013 .

New spin injection scheme based on spin gapless semiconductors: A first-principles study

S. Wang, E. Liu, H. Luo, 2015, 1509.08190.