Yangyang Xia

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

Songlin Feng, Bo Liu, Ying Li, 2016, International Workshop on Information Data Storage and International Symposium on Optical Storage.

Simulation of phase-change random access memory with 35nm diameter of the TiN bottom electrode by finite element modeling

Songlin Feng, Bo Liu, Yan Liu, 2016, International Workshop on Information Data Storage and International Symposium on Optical Storage.

Electrical properties of Cr-doped Sb2Te3 phase change material

Songlin Feng, Bo Liu, Qing Wang, 2016, International Workshop on Information Data Storage and International Symposium on Optical Storage.

Formation of recessed hole by NF3/O2 etching for phase change memory

Songlin Feng, Bo Liu, Lei Wang, 2016, International Workshop on Information Data Storage and International Symposium on Optical Storage.

The Effect of Ti-Rich TiN Film on Thermal Stability of Ge2Sb2Te5 for Phase Change Memory

Songlin Feng, Bo Liu, Lei Wang, 2016 .

CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performance

Songlin Feng, Bo Liu, Zhitang Song, 2015, Journal of Materials Science: Materials in Electronics.

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Songlin Feng, Zhitang Song, Yangyang Xia, 2015 .