Robin Lee

A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications

Min Cao, Sreedhar Natarajan, Hank Cheng, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

A Differential Data-Aware Power-Supplied (D$^{2}$AP) 8T SRAM Cell With Expanded Write/Read Stabilities for Lower VDDmin Applications

Meng-Fan Chang, Hiroyuki Yamauchi, Yung-Chi Chen, 2009, IEEE Journal of Solid-State Circuits.

12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications

Hidehiro Fujiwara, Jonathan Chang, Shien-Yang Wu, 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Tsung-Yung Jonathan Chang, Hung-Jen Liao, 2021, IEEE Journal of Solid-State Circuits.

15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications

Hidehiro Fujiwara, Hung-Jen Liao, Yen-Huei Chen, 2020, 2020 IEEE International Solid- State Circuits Conference - (ISSCC).

12.3 A low-power and high-performance 10nm SRAM architecture for mobile applications

Jonathan Chang, Michael Clinton, Hank Cheng, 2017, 2017 IEEE International Solid-State Circuits Conference (ISSCC).

A configurable 2-in-1 SRAM compiler with constant-negative-level write driver for low Vmin in 16nm Fin-FET CMOS

Jonathan Chang, Ming-Hung Chang, Hung-Jen Liao, 2014, 2014 IEEE Asian Solid-State Circuits Conference (A-SSCC).