B. Mohadjeri

发表

Investigations of evaporated silicon p‐n junctions and their application to junction field‐effect transistors

H. Norde, S. Berg, A. Söderbärg, 1990 .

Shallow depth profiles of arsenic and boron in CoSi2 measured by secondary ion mass spectrometry

B. Svensson, B. Mohadjeri, 1992 .

SIMS and depth profiling of semiconductor structures

B. Svensson, M. Linnarsson, M. Petravić, 1994 .

Surface recession and oxidation of silicon during bombardment by low energy oxygen ions

B. Svensson, M. Petravić, B. Mohadjeri, 1994 .

Isotope effects for ion-implantation profiles in silicon

B. Svensson, B. Mohadjeri, 1991 .

Oxidation and roughening of silicon during annealing in a rapid thermal processing chamber

K. Maex, E. Kondoh, M. Baklanov, 1998 .

Phase Transformations in a-Si/Ni/C-Si Structures with Different Interfacial Ni Layer Thicknesses

J. Linnros, B. Svensson, E. Monakhov, 1994 .

Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere

F. d'Heurle, J. Keinonen, C. Petersson, 1990 .

GETTERING OF NICKEL TO CAVITIES IN SILICON INTRODUCED BY HYDROGEN IMPLANTATION

J. Wong-Leung, B. Mohadjeri, James S. Williams, 1995 .