V. Tavitian

NH3 as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical vapor deposition

J. Eden, C. Kiely, V. Tavitian, 1989 .

Microstructural studies of epitaxial Ge films grown on [100] GaAs by laser photochemical vapor deposition

J. Eden, C. Kiely, V. Tavitian, 1989 .

Laser Photochemical Vapor Deposition of Ge Films (300 ≤ T ≤ 873 K) from GeH 4 : Roles of Ge 2 H 6 and Ge

S. A. Piette, D. Geohegan, J. Eden, 1986 .

Laser photochemical deposition of germanium‐silicon alloy thin films

J. Eden, I. Herman, H. H. Burke, 1989 .

Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition

D. Geohegan, J. Eden, C. Kiely, 1988 .

Laser Photochemical Vapour Deposition of Epitaxial Ge Films on GaAs from GeH 4 Using NH 3 as a Sensitiser

J. Eden, C. Kiely, V. Tavitian, 1988 .