D. Allan

The Relationship Between Microstructure and Contact Resistance in NiAuGe/ZrB 2 /Au Ohmic Contacts to GaAs.

M. Grimshaw, A. Staton-bevan, J. Herniman, 1990 .

The effects of plasma and ion beam processing on the properties of n-GaAs Schottky diodes

D. Allan, P.J. Smith, Pje Smith, 1984 .

The characterisation of GaAs NiAuGe ohmic contacts alloyed with an SiO2 overlayer for use in an ion implanted MESFET technology

S. C. Thorp, D. Allan, 1985 .

The use of Schottky barrier diodes for the detection of surface contamination and damage in the fabrication of GaAs MESFETS

P. Smith, D. Allan, J. Bowie, 1985 .

The Effect of Microstructure and Processing Procedures on the Resistivity of Co-Sputtered W-Si Layers on GaAs Substrates

S. Carter, A. Staton-bevan, J. Herniman, 1990 .

Stability of Schottky barriers at high temperatures for use in GaAs MESFET technology

D. Allan, 1986 .