C. F. E. Materials

Electron effective mass in unintentionally doped In$_{0.33}$Ga$_{0.67}$N determined by mid-infrared optical Hall effect

Mathias Schubert, Computer Engineering, Department of Physics, 2017, 1712.01738.

Field-Dependent Magnetic Domain Behavior in van der Waals Fe3GeTe2

Engineering, Il, Department of Materials Science, 2022, JOM.

Laser-assisted atom probe tomography of c-plane and m-plane InGaN test structures

National Institute of Standards, Boulder, Ga, 2021, 2102.06340.

Chiral assemblies of pinwheel superlattices on substrates

Engineering, Astronomy, Department of Materials Science, 2022, Nature.

Demagnetization protocols for frustrated interacting nanomagnet arrays

V. Rose, P. S. D. O. Physics, V. Crespi, 2007, cond-mat/0702084.

Influence of surface structure and strain on indium segregation in InGaAs: a first-principles investigation.

Technology, Technology Center, K. I. O. Science, 2020, 2010.14106.

Longitudinal spin Seebeck coefficient: heat flux vs. temperature difference method

Turin, D. Meier, T. Kuschel, 2017, Scientific Reports.