S. Deny

发表

First-step nucleation growth dependence of InAs/InGaAs/InP quantum dot formation in two-step growth

Z. Yin, J. Teng, A. Du, 2008, Nanotechnology.

Effect of rapid thermal annealing on the ordering of AlInP grown by metal-organic vapor-phase epitaxy

Z. Yin, A. Du, M. Chin, 2005 .

Effects of growth conditions on InAs quantum dot formation by metal-organic chemical vapor deposition using tertiarybutylarsine in pure N2 ambient

Z. Yin, X. Tang, S. Deny, 2006 .

Study of InAs/GaAs quantum dots grown by MOVPE under the safer growth conditions

Z. Yin, X. Tang, Daohua Zhang, 2007 .

Argon-plasma-induced InAs/InGaAs/InP quantum dot intermixing

Z. Yin, M. Chin, X. Tang, 2006, Nanotechnology.

MOVPE growth of InAs quantum dots for mid-IR applications

Jinghua Zhao, Zongyou Yin, Z. Yin, 2006 .

Photoluminescence of InAs quantum dots embedded in graded InGaAs barriers

Z. Yin, H. Gong, X. Tang, 2009 .

A new method of two-step growth of InAs/GaAs quantum dots with higher density and more size uniformity

Z. Yin, X. Tang, S. Deny, 2006 .