Zhi Jin

Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage

Xiaodong Wang, G. Du, Jingzhi Yin, 2000 .

Effect of non-strained capping layer on excess stress in strained layers

Benzhong Wang, Shuren Yang, Chunsheng Ma, 1999 .

Strain relaxation in buried strained layers by mixture of single and dipolar dislocation arrays

Shuren Yang, Chunsheng Ma, Shiyong Liu, 1999 .

The effects of misfit dislocation distribution and capping layer on excess stress

Benzhong Wang, Shuren Yang, Chunsheng Ma, 1999 .

A new expression of excess stress and the stability of buried strained heterostructures

Shuren Yang, Shiyong Liu, Zhi Jin, 1999 .

Effect of electron beam irradiation on the interphase boundary between crystalline Al and amorphous Al2O3

H. Ye, LianLong He, Zhiqing Yang, 2001 .

Effects of misfit dislocation interaction and 90°-type misfit dislocations on strain relaxation behavior in strained epilayer

Benzhong Wang, Shuren Yang, Zhi Jin, 1999 .

Self-organized InAs quantum dots formation by As/P exchange reaction on (001) InP substrate

Benzhong Wang, Shiyong Liu, Yudong Li, 1998 .

Effect of thin GaAs tensile-strained layer on InAs quantum dots on InP (001) substrate grown by LP-MOVPE

Bingbing Liu, G. Du, Shuren Yang, 2000 .

Influence of the amount of InAs on InAs quantum dots on thin GaAs tensile-strained layer on [001] InP substrate

G. Du, Jingzhi Yin, Shuren Yang, 1999, 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009).

Using the tensile stress field to control quantum dot arrangements

Weiyou Chen, Chunxiao Gao, Fanghai Zhao, 1999 .