Z. He

发表

Photoemission study of -HgS

L. Ilver, J. Kanski, W. Szuszkiewicz, 1997 .

Quantum size effect in low energy electron diffraction of thin films

S. Tong, H. Poon, Z. He, 2001 .

Ag(111) electron band structure and channeling by VLEED

M. Hove, I. Bartoš, Z. He, 1998 .

Electrochemical sulfur passivation of GaAs

X. Hou, Zhengwei Li, W. Cai, 1992 .

Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

X. Ding, X. Hou, Xun Wang, 1993 .

Angle-resolved photoemission spectroscopy of the 1 × 1 ordered overlayers on iodine-saturated GaAs(001) and InAs(001)

J. Yarmoff, Louise Olsson, L. Ilver, 1996 .

Band structure evolution in InAs overlayers on GaAs(110)

L. Ilver, J. Kanski, G. Holmén, 1996 .

Molecular‐beam‐epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source

X. Hou, Xun Wang, X. Ding, 1994 .