O. Schuler

Interface quality and electron transfer at the GaInP on GaAs heterojunction

F. Mollot, O. Dehaese, X. Wallart, 1998 .

XPS study of GaInP on GaAs interface

F. Mollot, O. Dehaese, X. Wallart, 1998 .

X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs

F. Mollot, O. Dehaese, X. Wallart, 1998 .

A gas-source MBE growth study of strained Ga1−xInxP layers on GaAs

Xavier Wallart, F. Mollot, F. Mollot, 1999 .

Nonselective wet chemical etching of GaAs and AlGaInP for device applications

F. Mollot, D. Théron, M. Zaknoune, 1998 .

Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1−xInxP layers

F. Mollot, X. Wallart, D. Deresmes, 2000 .

A study of GaInP/GaAs interfaces: metallurgical coupling of successive quantum wells

F. Mollot, O. Dehaese, X. Wallart, 1998 .

AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT

F. Mollot, D. Théron, S. Piotrowicz, 2000 .

An experimental study of the relaxation behaviour of strained Ga/sub 1-x/In/sub x/P layers grown on GaAs

F. Mollot, X. Wallart, O. Schuler, 1998, Conference Proceedings. 1998 International Conference on Indium Phosphide and Related Materials (Cat. No.98CH36129).