S. Batra

发表

Role of negatively charged vacancies in secondary grain growth in polycrystalline silicon during rapid thermal annealing

S. Banerjee, K. Park, S. Batra, 1991 .

Diffusion of as and B in Polysilicon/ Single Crystal Silicon Systems

S. Banerjee, G. Lux, K. Park, 1990 .

Discontinuity of B‐diffusion profiles at the interface of polycrystalline Si and single crystal Si

S. Banerjee, C. Dennison, Kyusung Park, 1993 .

A leakage current model for sub-micron lightly-doped drain-offset polysilicon TFTs

S. Banerjee, J. Damiano, M. Manning, 1995 .

Modeling of boron diffusion in polysilicon-on-silicon structures using a rapid thermal anneal step for ultra-shallow junction formation

S. Banerjee, G. Lux, S. Batra, 1995 .

A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal Si

S. Banerjee, C. Dennison, M. Manning, 1993 .

Comparison of Arsenic and Boron Diffusion in Polycrystalline/Single‐Crystal Silicon Systems

S. Banerjee, Kyusung Park, G. Lux, 1991 .

Secondary Grain Growth in Heavily Doped Polysilicon During Rapid Thermal Annealing

S. Banerjee, Kyusung Park, S. Batra, 1992 .

Parallel hot-carrier-induced degradation mechanisms in hydrogen-passivated polysilicon-on-insulator LDD p-MOSFET's

S. Bhattacharya, B.-Y. Nguyen, P. Tobin, 1992, IEEE Electron Device Letters.

Analysis of ion-implanted amorphous and polycrystalline silicon films as diffusion sources for ultrashallow junctions

S. Banerjee, T. C. Smith, G. Lux, 1991 .

Rapid thermal hydrogen passivation of polysilicon MOSFETs

A. Tasch, D. Kwong, M. Rodder, 1990, IEEE Electron Device Letters.