W. Futako

发表

Wide band gap amorphous silicon thin films prepared by chemical annealing

C. Fortmann, I. Shimizu, W. Futako, 1999 .

Wide-gap a-Si:H fabricated by controlling voids

I. Shimizu, W. Futako, K. Yoshino, 1996 .

Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

C. Fortmann, I. Shimizu, W. Futako, 1996 .

Particle formation and a-Si:H film deposition in narrow-gap RF plasma CVD

R. Hayashi, A. Matsuda, M. Kondo, 1999 .

Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon

A. Matsuda, M. Kondo, T. Nishimiya, 1997 .

Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

C. Fortmann, I. Shimizu, W. Futako, 1998 .

Improved p-i-n solar cells structure for narrow bandgap a-Si:H prepared by Ar* chemical annealing at high temperatures

T. Kamiya, C. Fortmann, W. Futako, 2001 .

High-rate growth of stable a-Si:H

Michio Kondo, Ryo Hayashi, A. Payne, 1999 .

High electric field response of wide bandgap a-Si:H photodiodes probed by transient current measurements

T. Kamiya, T. Sugawara, I. Shimizu, 2004 .

High electric field photocurrent of Vidicon and diode devices using wide band gap a-Si:H prepared with intentional control of silicon network by chemical annealing

T. Kamiya, T. Sugawara, W. Futako, 2000 .

Photoconductivity gain over 10 at a large electric field in wide gap a-Si:H

T. Kamiya, C. Fortmann, I. Shimizu, 1998 .

Wide Band Gap a-Si:H Based Ihgh Gain Vidicon Devices Prepared by Chemical Anniealing

T. Kamiya, C. Fortmann, T. Sugawara, 1998 .

Extremely Narrow Band Gap,∼1·50Ev, Amorphous Silicon

T. Kamiya, C. Fortmann, T. Sugawara, 1998 .

Band gap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation

T. Kamiya, C. Fortmann, B. Kaplan, 1998 .

In situ ESR observation of interface dangling bond formation processes during amorphous SiO2 growth on Si

T. Umeda, S. Yamasaki, T. Yasuda, 2002 .

In situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111).

S. Yamasaki, N. Mizuochi, W. Futako, 2004, Physical review letters.

Role of Hydrogen for Microcrystalline Silicon Formation

A. Matsuda, M. Kondo, T. Nishimiya, 1998 .

In situ electron spin resonance observation of Si(111) 7×7 surface during hydrogenation process

S. Yamasaki, T. Yasuda, J. Isoya, 2001 .

In situ ESR observation of interface dangling bond formation processes during ultrathin SiO2 growth on Si(111).

N. Mizuochi, W. Futako, S. Yamasaki, 2004, Physical review letters.

The structure of 1.5–2.0 eV band gap amorphous silicon films prepared by chemical annealing

T. Kamiya, C. Fortmann, I. Shimizu, 2000 .