Ronghua Yu

发表

Phosphorus diffusion in Si-based resonant interband tunneling diodes and tri-state logic using vertically stacked diodes

P. R. Berger, S. Rommel, P. Thompson, 2005 .

Impedance-Based Wireless Sensor Network for Metal-Protective Coating Evaluation

Chao You, Ronghua Yu, Qixin Zhou, 2011, Int. J. Meas. Technol. Instrum. Eng..

Analysis of the Voltage Swing for Logic and Memory Applications in Si/SiGe Resonant Interband Tunnel Diodes Grown by Molecular Beam Epitaxy

P. R. Berger, P. Thompson, N. Jin, 2007, IEEE Transactions on Nanotechnology.

Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si∕SiGe resonant interband tunnel diodes

Paul R. Berger, P. Thompson, Sung-Yong Chung, 2006 .

Low Sidewall Damage Plasma Etching with ICP-RIE and HBr Chemistry of Si/SiGe Resonant Interband Tunnel Diodes

P. R. Berger, P. Thompson, Sung-Yong Chung, 2005, 2005 International Semiconductor Device Research Symposium.

Si-based Resonant Interband Tunnel Diode with Cutoff Frequency over 20 GHz and Estimated Peak Current Density of 218 kA/cm/sup 2'/

P. R. Berger, P. Thompson, N. Jin, 2005, 2005 International Semiconductor Device Research Symposium.

Delta-Doped Si/SiGe Zero-Bias Backward Diodes for Micro-Wave Detection

P. R. Berger, P. Fay, P. Thompson, 2007, 2007 65th Annual Device Research Conference.

Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $\hbox{Si}_{0.8}\hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers

P. R. Berger, P. Thompson, N. Jin, 2008, IEEE Electron Device Letters.

Observation of strain in pseudomorphic Si1−xGex by tracking phonon participation in Si∕SiGe resonant interband tunnel diodes via electron tunneling spectroscopy

Paul R. Berger, R. Anisha, P. Thompson, 2009 .

Sensitivity of Si-based zero-bias backward diodes for microwave detection

Patrick Fay, Paul R. Berger, Paul R. Berger, 2007 .

Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Paul R. Berger, P. Thompson, N. Jin, 2004 .

Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

Paul R. Berger, P. Thompson, N. Jin, 2003 .

Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration

Paul R. Berger, S. Kurinec, R. Lake, 2004 .

Strain engineered Si∕SiGe resonant interband tunneling diodes with outside barriers grown on Si0.8Ge0.2 virtual substrates

Paul R. Berger, R. Anisha, P. Thompson, 2008 .

The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits

Niu Jin, P.R. Berger, Ronghua Yu, 2006, IEEE Transactions on Electron Devices.

Integration of Si/SiGe HBT and Si-based RITD demonstrating controllable negative differential resistance for wireless applications

Paul R. Berger, P. Thompson, Sung-Yong Chung, 2006 .

A combined model for Si-based resonant interband tunneling diodes grown on SOI

P. R. Berger, P. Thompson, Sung-Yong Chung, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications

Paul R. Berger, R. Lake, P. Thompson, 2003 .

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

P. R. Berger, D. Pawlik, S. Rommel, 2009 .

Si/SiGe resonant interband tunnel diode with f/sub r0/ 20.2 GHz and peak current density 218 kA/cm/sup 2/ for K-band mixed-signal applications

P.R. Berger, P. R. Berger, P. Thompson, 2006, IEEE Electron Device Letters.

Simplified Si resonant interband tunnel diodes

P. R. Berger, D. Pawlik, S. Rommel, 2007, 2007 International Semiconductor Device Research Symposium.