Ye Yuan

发表

Drive High Power UVC‐LED Wafer into Low‐Cost 4‐Inch Era: Effect of Strain Modulation

Xiaoxiao Sun, Tao Wang, Zhaoying Chen, 2021, Advanced Functional Materials.

Modulating properties by light ion irradiation: From novel functional materials to semiconductor power devices

Shengqiang Zhou, Ye Yuan, Xinqiang Wang, 2022, Journal of Semiconductors.

Excavating the Communication Performance in GaN‐Based Green Micro‐LEDs: Modular‐Architectured p‐Type Region

P. Tian, Zhaoying Chen, Xinqiang Wang, 2022, Advanced Photonics Research.

Watts-level ultraviolet-C LED integrated light sources for efficient surface and air sterilization

Shangfeng Liu, Ye Yuan, Tain Li, 2022, Journal of Semiconductors.

Paving the Way for High‐Performance UVB‐LEDs Through Substrate‐Dominated Strain‐Modulation

Zhaoying Chen, X. Rong, Tao Wang, 2022, Advanced Functional Materials.

High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells

F. Liu, W. Ge, J. Lee, 2022, Advanced Optical Materials.

Deep‐Ultraviolet Micro‐LEDs Exhibiting High Output Power and High Modulation Bandwidth Simultaneously

W. Ge, P. Tian, Ping Wang, 2022, Advanced materials.

The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

Fabi Zhang, Zhiwen Liang, Jin Zhang, 2022, Materials.

Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

Tao Wang, Xinqiang Wang, Jin Zhang, 2021, Journal of Semiconductors.

Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications

Shiping Guo, Xiaoxiao Sun, Tao Wang, 2021 .

The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate

Fabi Zhang, Junjie Kang, Zhiwen Liang, 2022, Symmetry.

Breaking the Transverse Magnetic-Polarized Light Extraction Bottleneck of Ultraviolet-C Light-Emitting Diodes Using Nanopatterned Substrates and an Inclined Reflector

Md. Zunaid Baten, Md. Omar Faruque, Tashfiq Ahmed, 2022, ACS Photonics.

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

W. Ge, Xiaoxiao Sun, Ping Wang, 2022, Advanced science.

Reduction of vacancy defects induced by thermal annealing in β-Ga2O3 epilayer

W. Ge, Shixiong Zhang, N. Tang, 2023, Micro and Nanostructures.

Planar AlN/GaN resonant tunneling diodes fabricated using nitrogen ion implantation

K. Cheng, B. Sheng, Liuyun Yang, 2023, Applied Physics Letters.

Repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown on silicon

B. Sheng, Tao Wang, Liuyun Yang, 2022, Applied Physics Letters.

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene

F. Liu, H. Peng, Jilin Tang, 2023, Science advances.

Modulation bandwidth improvement of GaN-based green micro-LEDs array by polarization-induced p-type doping

P. Tian, Zhaoying Chen, Xinqiang Wang, 2022, Applied Physics Letters.

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Ye Yuan, Hongmeng Zhang, Qi Wang, 2024, Semiconductor Science and Technology.