C. Heinlein

发表

Selective area regrowth of n-GaAs with reduced interface carrier depletion using arsenic passivation

B. Fimland, J. Grepstad, T. Berge, 1999 .

Interfacial effects during GaN growth on 6H-SiC

J. Pankove, C. Magee, J. Torvik, 1999 .

Patterned regrowth of n-GaAs by molecular beam epitaxy using arsenic passivation

B. Fimland, J. Grepstad, T. Berge, 1999 .

Mineralogy and stratigraphy of phyllosilicate‐bearing and dark mantling units in the greater Mawrth Vallis/west Arabia Terra area: Constraints on geological origin

A. McEwen, G. Swayze, E. Malaret, 2010 .

Preconditioning of c-plane sapphire for GaN molecular beam epitaxy by electron cyclotron resonance plasma nitridation

S. Einfeldt, D. Hommel, J. Grepstad, 1998 .

Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation

H. Riechert, J. Grepstad, T. Berge, 1997 .

Plasma preconditioning of sapphire substrate for GaN epitaxy

H. Riechert, J. Grepstad, R. Averbeck, 1997 .

Mineralogy and stratigraphy of phyllosilicate‐bearing and dark mantling units in the greater Mawrth Vallis/west Arabia Terra area: Constraints on geological origin

J., A. McEwen, G. Swayze, 2010 .