N. Tomita

发表

Transmission electron microscopy observation of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs(100) reverse-mesa etched substrates

S. Hiyamizu, N. Sano, S. Shimomura, 1995 .

Optical properties of GaAs/Al0.3Ga0.7As T-shaped quantum well structure fabricated by glancing angle molecular beam epitaxy on GaAs (100) patterned substrates

S. Hiyamizu, N. Sano, S. Shimomura, 1994 .

Preferential migration of indium atoms on the (411)A plane in InGaAs grown on GaAs channeled substrates by molecular beam epitaxy

S. Hiyamizu, N. Sano, A. Wakejima, 1995 .

LATERAL VARIATION OF INDIUM CONTENT IN INGAAS GROWN ON GAAS CHANNELED SUBSTRATES BY MOLECULAR BEAM EPITAXY

S. Hiyamizu, N. Sano, A. Wakejima, 1994 .

Selective area growth of GaAs using a Ga beam with a step-function lateral intensity profile

S. Hiyamizu, S. Shimomura, K. Murase, 1995 .

Improved cathodoluminescence properties of GaAs/Al0.3Ga0.7As tilted T‐shaped quantum wires fabricated on (111)B facet by glancing‐angle molecular beam epitaxy

S. Hiyamizu, N. Sano, S. Shimomura, 1996 .

Improved optical qualities of tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy

S. Hiyamizu, S. Shimomura, T. Watanabe, 1997 .