N. Kaufmann

发表

Investigation of indium-rich InGaN alloys and kinetic growth regime of GaN

N. Kaufmann, 2013 .

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

P. Ruterana, N. Grandjean, A. Dussaigne, 2011 .

Study on Organic Triplet Exciton Emission and Quenching Processes by Low-temperature Photo- and Electroluminescence Spectroscopy

R. H. Jansen, M. Heuken, H. Kalisch, 2008 .

Effects of the annealing temperature on the structural and electronic properties of MBE grown InGaN/GaN quantum wells

N. Grandjean, A. Dussaigne, S. Kret, 2011 .

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

N. Grandjean, P. Valvin, B. Gil, 2012 .

Critical impact of Ehrlich-Schwobel barrier on GaN surface morphology during homoepitaxial growth

N. Grandjean, B. Hourahine, D. Martin, 2016 .

Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors

J. Carlin, N. Grandjean, R. Butté, 2011 .

TEM and XANES study of MOVPE grown InAIN layers with different indium content

J. Carlin, N. Grandjean, S. Kret, 2011 .