P. Enquist

发表

Complementary AlGaAs/GaAs HBT I2 L ( CHI2 L) Technology

J. Swart, D. B. Slater, P. Enquist, 1992 .

R. Trew, J. Hutchby, A. Morris, 1994, IEEE Electron Device Letters.

Low-power, high-speed InGaAs/InP photoreceiver for highly-parallel optical data links

D. C. Craft, M. L. Lovejoy, B. H. Rose, 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.

High speed non-selfaligned InP/InGaAs Npn heterojunction bipolar transistor grown by low pressure metal organic vapour phase epitaxy

R. Trew, J. Hutchby, V. Haven, 1992 .

Scalability and Low Cost of Ownership Advantages of Direct Bond Interconnect (DBI¯) as Drivers for Volume Commercialization of 3-D Integration Architectures and Applications

P. Enquist, 2008 .

Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors

F. E. Najjar, L. Eastman, W. Schaff, 1987 .

Comparison of compositionally graded to abrupt emitter‐base junctions used in the heterojunction bipolar transistor

L. Eastman, L. Ramberg, P. Enquist, 1987 .

Phase matched AlGaAs/GaAs complementary HBTs for push-pull operation

R. Trew, A. Morris, P. Enquist, 1992 .

Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance

Lester F. Eastman, F. E. Najjar, Eugene A. Fitzgerald, 1987 .

Advanced Direct Bond Technology Paul Enquist

P. Enquist, 2011 .

3D Integration at Ziptronix, Inc.

P. Enquist, 2008 .

Low Temperature Direct Bond Technology for 3D Microelectronics Integration and Wafer Scale Packaging

P. Enquist, 2010 .

Direct Bond Interconnect (DBI®) for fine-pitch bonding in 3D and 2.5D integrated circuits

G. Fountain, L. Mirkarimi, S. Arkalgud, 2017, 2017 Pan Pacific Microelectronics Symposium (Pan Pacific).

Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy

J. Hutchby, T. Lyon, P. Enquist, 1988 .

Secondary ion mass spectroscopy depth profiles of heterojunction bipolar transistor emitter-base heterojunctions grown by low pressure OMVPE

P. Enquist, 1988 .

Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy

L. Eastman, G. Wicks, C. Hitzman, 1985 .

Transmission electron microscopy study of defects in Sn-doped GaAs films grown by molecular beam epitaxy

C. B. Carter, P. Enquist, S. H. Chen, 1987 .

Tin-Doping Induced Defects in GaAs Films Grown by Molecular Beam Epitaxy

C. B. Carter, P. Enquist, S. H. Chen, 1984 .

Low Cost of Ownership scalable copper Direct Bond Interconnect 3D IC technology for three dimensional integrated circuit applications

Paul Enquist, G. Fountain, C. Petteway, 2009, 2009 IEEE International Conference on 3D System Integration.

Fully 3-D Integrated Pixel Detectors for X-Rays

Pawel Grybos, Robert Szczygiel, Piotr Maj, 2016, IEEE Transactions on Electron Devices.

Surface recombination current and emitter compositional grading in Npn and Pnp GaAs/AlxGa1−xAs heterojunction bipolar transistors

J. Hutchby, H. Casey, A. Springthorpe, 1989 .

Observation of radiative and nonradiative tunneling in GaAs/AlxGa1−xAs heterojunction bipolar transistors with compositionally graded base‐emitter heterojunctions

J. Hutchby, H. Casey, A. Springthorpe, 1989 .

Self-aligned AlGaAs/GaAs HBT with selectively regrown OMVPE emitter

R. Trew, J. Hutchby, A. Morris, 1993, IEEE Electron Device Letters.

Self-aligned mesa HBT with selective epitaxial regrown emitter and no base etch

R. Trew, J. Hutchby, A. Morris, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Low emitter resistance GaAs based HBT's without InGaAs caps

R. Trew, J. Hutchby, A. Morris, 1994, IEEE Electron Device Letters.

Millimeter-wave AlGaAs/GaAs p-n-p HBT

R. Trew, J. Hutchby, A. Morris, 1991, IEEE Electron Device Letters.

Monolithic integration of complementary HBTs by selective MOVPE

F. E. Najjar, J. Hutchby, J.A. Hutchby, 1990, IEEE Electron Device Letters.

Characterization and thermal instability of low‐resistivity carbon doped GaAs grown by low‐pressure organometallic vapor phase epitaxy

P. Enquist, 1992 .

P-TYPE DOPING LIMIT OF CARBON IN ORGANOMETALLIC VAPOR PHASE EPITAXIAL GROWTH OF GAAS USING CARBON TETRACHLORIDE

P. Enquist, 1990 .

Experimental values for the hole diffusion coefficient and collector transit velocity in P-n-p AlGaAs/GaAs HBTs

F. E. Najjar, R. Trew, J. Hutchby, 1991, IEEE Electron Device Letters.

Heterojunction bipolar transistor using pseudomorphic GaInAs for the base

F. E. Najjar, L. Eastman, W. Schaff, 1986 .

Complementary AlGaAs/GaAs HBT I/sup 2/L (CHI/sup 2/L) technology

D.B. Slater, P.M. Enquist, I.W. Swart, 1992, IEEE Electron Device Letters.

Very high gain AlGaAs/GaAs pnp heterojunction bipolar transistor

F. E. Najjar, M. Y. Chen, P. Enquist, 1989 .

Applications Driving Adoption of Direct Bond Technology

Paul Enquist, P. Enquist, 2012 .

Ultra-low-power, long-wavelength photoreceivers for massively-parallel optical data links

Richard F. Carson, R. J. Shul, D. C. Craft, 1996, 1996 Proceedings 46th Electronic Components and Technology Conference.

Metal/Silicon Oxide Hybrid Bonding

P. Enquist, 2012 .

Scalable direct bond technology and applications driving adoption

P. Enquist, P. Enquist, 2012, 2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International.