J. Doerschel

发表

Growth conditions and composition of terbium aluminum garnet single crystals grown by the micro pulling down technique

A. Yoshikawa, D. Klimm, T. Fukuda, 2001 .

Transmission electron microscopy investigation of extended defects in heavily Se-doped bulk GaSb

J. Doerschel, 1994 .

The problem of twinning in NdGaO3 Czochralski crystals

R. Uecker, V. Alex, P. Reiche, 1994 .

Some Observations Concerning the Initial Stage of Plastic Flow in Silicon

F. Kirscht, J. Doerschel, C. Hansch, 1978, May 16.

Differences in plastic deformation behaviour of CZ‐ and FZ‐grown silicon crystals

F. Kirscht, J. Doerschel, 1981 .

Polytype stability in nitrogen-doped PVT—grown 2″—4H–SiC crystals

M. Rossberg, K. Irmscher, D. Siche, 2005 .

Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique

J. Doerschel, U. Geissler, 1992 .

Growth related distribution of secondary phase inclusions in 6H SiC single crystals

J. Wollweber, D. Siche, J. Doerschel, 2001 .

Influence of nitrogen doping on the properties of 4H–SiC single crystals grown by physical vapor transport

K. Irmscher, D. Siche, J. Doerschel, 2003 .

Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapor Transport

J. Wollweber, K. Irmscher, D. Siche, 2003 .

Evolution of domain walls in 6H- and 4H-SiC single crystals

J. Wollweber, D. Siche, J. Doerschel, 2002 .

Phase Separation in Oxide-Borate Mixed Systems

D. Klimm, S. Ganschow, R. Bertram, 2003 .

Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiC

G. Wagner, J. Doerschel, D. Schulz, 2005 .

Influence of excess silicon on the surface morphology and defect structure during the initial stages of SiC sublimation growth

J. Wollweber, W. Eiserbeck, D. Siche, 1999 .

Cathodoluminescence study of the activator distribution in SrS:Cu, Ag thin luminescent films

P. Smet, D. Poelman, J. Doerschel, 2004 .

Phase separation during the melting of oxide borates LnCa4O(BO3)3 (Ln=Y, Gd)

D. Klimm, S. Ganschow, R. Bertram, 2002 .

Crystal structure of strontium lanthanum trigallium heptoxide, (Sr0.5La0.5)2Ga3O7

R. Uecker, W. Schmitz, J. Doerschel, 1997 .

Macrodefect Generation in SiC Single Crystals Caused by Polytype Changes

J. Wollweber, D. Siche, J. Doerschel, 2002 .

Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC

M. Rossberg, K. Irmscher, D. Siche, 2005 .

Stacking faults in heavily nitrogen doped 4H-SiC

H. Strunk, M. Nerding, K. Irmscher, 2004 .

Morphological Features of Sublimation-Grown 4H-SiC Layers

J. Doerschel, D. Schulz, 2003 .

Transmission electron microscope investigation of indentation induced dislocation configurations on the (001) GaSb face

J. Doerschel, 1994 .

Sublimation growth of 3C-SiC on 6H-SiC seeds

V. Alex, J. Wollweber, J. Doerschel, 2005 .

Crystal structure of aluminium lanthanum strontium tantalum oxide, (La0.272Sr0.728)(Al0.648Ta0.352)O3

P. Reiche, J. Doerschel, M. Steins, 1997 .

Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD

G. Wagner, K. Irmscher, J. Doerschel, 2001 .