J. P. Ousten

Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling

Jeffrey Ewanchuk, Ali Ibrahim, Zoubir Khatir, 2018, Microelectron. Reliab..

Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions

Stéphane Lefebvre, Zoubir Khatir, L. Dupont, 2007, Microelectron. Reliab..

Power module lifetime estimation from chip temperature direct measurement in an automotive traction inverter

Philippe Dupuy, Gerard Coquery, Richard Lallemand, 2001, Microelectron. Reliab..

Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications

Zoubir Khatir, J. P. Ousten, 2011, Microelectron. Reliab..

Effect of power cycling tests on traps under the gate of Al2O3/AlGaN/GaN normally-ON devices

Zoubir Khatir, A. Ibrahim, J. P. Ousten, 2018, Microelectron. Reliab..

Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions

Zoubir Khatir, Richard Lallemand, A. Ibrahim, 2016, Microelectron. Reliab..

Power Cycling Tests in High Temperature Conditions of SiC-MOSFET Power Modules and Ageing Assessment

Zoubir Khatir, Richard Lallemand, J. P. Ousten, 2016 .