D. Crippa

发表

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

V. Scuderi, F. La Via, C. Calabretta, 2021, Materials.

Effect of N and Al Doping on 3C-SiC Stacking Faults

V. Scuderi, F. La Via, C. Calabretta, 2022, Materials Science Forum.

Impact of N Doping on 3C-SiC Defects

V. Scuderi, F. La Via, C. Calabretta, 2022, Materials Science Forum.

Review of Sublimation Growth of SiC Bulk Crystals

A. Danilewsky, P. Wellmann, Johannes Steiner, 2022, Materials Science Forum.

Mechanism of stacking fault annihilation in 3C-SiC epitaxially grown on Si(001) by molecular dynamics simulations

M. Zimbone, C. Bongiorno, A. Marzegalli, 2021 .

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

L. Calcagno, G. Condorelli, G. Foti, 2008 .

Thin SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor with Very Abrupt Junctions

G. Condorelli, F. Giannazzo, F. Portuese, 2008 .

Very High Growth Rate Epitaxy Processes with Chlorine Addition

L. Calcagno, G. Condorelli, G. Foti, 2007 .

New Achievements on CVD Based Methods for SiC Epitaxial Growth

L. Calcagno, F. Roccaforte, G. Foti, 2005 .

Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC

L. Calcagno, C. Bongiorno, V. Scuderi, 2022, Crystal growth & design.

Opening through 200 mm Silicon Carbide Epitaxy

M. Mauceri, D. Crippa, M. Azadmand, 2022, Materials Science Forum.

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)

M. Syväjärvi, R. Yakimova, P. Mawby, 2018, Materials Science Forum.

4H-SiC Epitaxial Layer Grown on 150 mm Automatic Horizontal Hot Wall Reactor PE106

G. Litrico, M. Camarda, F. La Via, 2014 .

Chapter 1 CVD technologies for silicon: A quick survey

D. Crippa, A. Rinaldi, 2001 .

AlGaN HEMTs on patterned resistive/conductive SiC templates

M. Leszczynski, P. Prystawko, M. Sarzyński, 2017 .

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Giuseppe Pistone, F. Portuese, Marco Mauceri, 2006 .

4h SiC epitaxial growth with chlorine addition

G. Foti, G. Abbondanza, S. Leone, 2006 .

H SiC Epitaxial Growth with Chlorine Addition

G. Foti, G. Abbondanza, S. Leone, 2006 .

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

M. Syväjärvi, R. Yakimova, M. Zimbone, 2021, Materials.

Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach

H. von Känel, T. Kreiliger, R. Bergamaschini, 2019, Materials.

Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture

H. Känel, R. Bergamaschini, A. Marzegalli, 2018 .

Progress in SiC-4H Epitaxy with Horizontal Hot Wall Reactors

G. Litrico, M. Mauceri, D. Crippa, 2013 .

Effects of the Growth Rate on the Quality of 4H Silicon Carbide Films for MOSFET Applications

G. Litrico, A. Alberti, G. Pellegrino, 2014 .

On the “Step Bunching” Phenomena Observed on Etched and Homoepitaxially Grown 4H Silicon Carbide

C. Bongiorno, S. Scalese, A. La Magna, 2011 .

4H-SiC epitaxial layer growth by trichlorosilane (TCS)

Giuseppe Pistone, Lucia Calcagno, Marco Mauceri, 2008 .

High growth rate process in a SiC horizontal CVD reactor using HCl

Giuseppe Pistone, F. Portuese, Fabrizio Roccaforte, 2006 .

Towards the Optimization of AMT Barrel Reactors for Silicon Epitaxy

P. Raimondi, S. Carrà, G. Vaccari, 1997 .

Growth of thick [111]-oriented 3C-SiC films on T-shaped Si micropillars

R. Bergamaschini, L. Miglio, F. Mancarella, 2021 .

Study of the Effects of Growth Rate, Miscut Direction and Postgrowth Argon Annealing on the Surface Morphology of Homoepitaxially Grown 4H Silicon Carbide Films

G. Litrico, A. La Magna, P. Fiorenza, 2013 .

Fast Growth Rate Epitaxy by Chloride Precursors

A. La Magna, M. Camarda, F. La Via, 2013 .

Paving the way toward the world's first 200mm SiC pilot line

M. Calabretta, A. Messina, M. Musolino, 2021 .

Development of n-type epitaxial growth on 200 mm 4H-SiC wafers for the next generation of power devices

M. Calabretta, A. Messina, M. Musolino, 2023, Microelectronic Engineering.

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Giuseppe Pistone, F. Portuese, Fabrizio Roccaforte, 2006 .

Thick Epitaxial Layers Growth by Chlorine Addition

Danilo Crippa, M. Camarda, Giuseppe Abbondanza, 2009 .

In situ etch treatment of bulk surface for epitaxial layer growth optimization

C. Pirri, S. Ferrero, L. Scaltrito, 2006 .

Growth, morphological and structural characterization of silicon carbide epilayers for power electronic devices applications

E. Celasco, S. Porro, S. Ferrero, 2005 .

Epitaxial Growth on 150 mm 2° off Wafers

P. Fiorenza, F. La Via, N. Piluso, 2015 .

Study of the Impact of Growth and Post-Growth Processes on the Surface Morphology of 4H Silicon Carbide Films

C. Bongiorno, A. La Magna, V. Raineri, 2012 .

X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers

H. Känel, T. Kreiliger, M. Meduňa, 2019, Journal of Crystal Growth.

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates

H. von Känel, T. Kreiliger, A. Marzegalli, 2016 .

Defect Reduction in Epitaxial 3C-SiC on Si(001) and Si(111) by Deep Substrate Patterning

H. von Känel, T. Kreiliger, L. Miglio, 2015 .

Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges

I. Prieto, H. von Känel, T. Kreiliger, 2016 .

(Invited) Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates

P. Niedermann, R. Kaufmann, A. Neels, 2014 .