A. E. Kunitsyn

Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures

N. Faleev, V. Chaldyshev, V. Preobrazhenskii, 1998 .

Control of spatial distribution of As clusters in LT GaAs by indium delta doping

N. Faleev, N. Bert, V. Chaldyshev, 1996, Proceedings of Semiconducting and Semi-Insulating Materials Conference.

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

V. Chaldyshev, V. Preobrazhenskii, M. D. Vilisova, 2002 .

Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures

V. Chaldyshev, V. Preobrazhenskii, M. Putyato, 1999 .

Reciprocal Space X-Ray Mapping and Transmission Electron Microscopic Studies of Coincided δ-Inas and As-Cluster Superlattices in Gaas Films Grown by Molecular-Beam Epitaxy at Low Temperature

Yu. G. Musikhin, P. Werner, N. Faleev, 1999 .

Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy

Yu. G. Musikhin, P. Werner, N. Bert, 1998 .

LT GaAs delta-doped with In: enhanced As excess, In-Ga intermixing, As cluster array ordering

Yu. G. Musikhin, A. Suvorova, P. Werner, 1998, Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159).

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. Faleev, V. Chaldyshev, V. Preobrazhenskii, 1998 .

Control of point defects and arsenic clusters in low-temperature grown GaAs by isovalent impurity doping

M. A. Putyato, Yu. G. Musikhin, P. Werner, 1997, IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat..

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Yu. G. Musikhin, N. Faleev, N. Bert, 1997 .

Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

N. Faleev, V. Chaldyshev, V. Preobrazhenskii, 1996 .

Clusters and the Nature of Superconductivity in Ltmbe-GaAs

S. Kozyrev, N. Bert, V. Chaldyshev, 1993 .

Gallium arsenide grown by molecular beam epitaxy at low temperatures: crystal structure, properties, superconductivity

S. Kozyrev, A. Tybulewicz, V. Chaldyshev, 1993 .

Two-dimensional precipitation of As clusters due to indium delta-doping of GaAs films grown by molecular beam epitaxy at low temperature

N. Faleev, N. Bert, V. Chaldyshev, 1997 .

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

Yu. G. Musikhin, P. Werner, N. Faleev, 1999 .

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs

N. Faleev, N. Bert, V. Chaldyshev, 1995 .

Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

A. Markov, V. Chaldyshev, A. E. Kunitsyn, 1997 .