H. Kakinuma

发表

Plasma Etching of ITO Thin Films Using a CH4/H2 Gas Mixture

M. Mohri, H. Kakinuma, M. Sakamoto, 1990 .

Influence of Deposition Conditions on Properties of Hydrogenated Amorphous Silicon Prepared by RF Glow Discharge

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1985 .

Enhancement of the Breakdown Voltage of GaAs/AlxGa 1-xAs Heterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

M. Mohri, H. Kakinuma, Takashi Ueda Takashi Ueda, 1997 .

Intrinsic stress and hydrogen bonding in glow‐discharge amorphous silicon films

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1986 .

Influence of RF Power on Properties of a-Si1-xGex:H Prepared by RF Glow Discharge Decomposition

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1986 .

Thickness dependence of staebler-wronski effect in a-Si:H

S. Nishikawa, Tsukasa Watanabe, H. Kakinuma, 1983 .

Amorphous carbon coating on amorphous silicon photoreceptors

H. Fukuda, S. Nishikawa, Tsukasa Watanabe, 1987 .

Improvement of conversion efficiency by In0.52Al0.48 As window layers for p+n InP solar cells

M. Akiyama, Ueda Takashi, M. Mohri, 1998 .

Direct-contact type image sensors using a novel amorphous-silicon photodiode array

M. Mohri, H. Kakinuma, M. Sakamoto, 1991, IEEE Electron Device Letters.

Density‐of‐states determination of amorphous silicon from space‐charge‐limited photocurrents

H. Kakinuma, M. Sakamoto, H. Sawai, 1990 .

Optical mode softening in the incommensurate phase of Sr2Nb2O7

S. Kojima, K. Ohi, T. Nakamura, 1979 .

Ion-bombarded-assisted reaction in the GeAuGaAs system

T. Inada, M. Ishikiriyama, Y. Funaki, 1985 .

Rutherford backscattering analysis of silicide formation in MoSi structures by ion implantation

T. Inada, K. Kishi, S. Miyagi, 1983 .

Phase Transition in Sr 2 Nb 2 O 7 at 215°C

K. Ohi, M. Kimura, H. Kakinuma, 1979 .

Characteristics of Cr Schottky amorphous silicon photodiodes and their application to linear image sensors

Hiroaki Kakinuma, Masaaki Sakamoto, H. Sawai, 1990 .

Structural properties of polycrystalline silicon films prepared at low temperature by plasma chemical vapor deposition

T. Tsuruoka, M. Mohri, H. Kakinuma, 1991 .

MECHANISM OF LOW-TEMPERATURE POLYCRYSTALLINE SILICON GROWTH FROM A SIF4/SIH4/H2 PLASMA

T. Tsuruoka, M. Mohri, H. Kakinuma, 1995 .

Fabrication of TFTs using plasma CVD poly-Si at very low temperature

T. Tsuruoka, M. Mohri, H. Kakinuma, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Very-Low-Temperature Preparation of Poly-Si Films by Plasma Chemical Vapor Deposition Using SiF4/SiH4/H2 Gases

M. Mohri, H. Kakinuma, Masaaki Sakamoto Masaaki Sakamoto, 1991 .

Comprehensive interpretation of the preferred orientation of vapor-phase grown polycrystalline silicon films

H. Kakinuma, 1995 .

Phosphorus Doping Using Electron Cyclotron Resonance Plasma for Large-Area Polycrystalline Silicon Thin Film Transistors

H. Kakinuma, Mikio Mohri Mikio Mohri, Taiji Tsuruoka Taiji Tsuruoka, 1994 .

Effects of low‐level boron doping on the photocurrent of amorphous silicon Schottky photodiodes

H. Kakinuma, M. Sakamoto, Y. Kasuya, 1989 .

Broad photoluminescence band in undoped AlxGa1−xAs grown by organometallic vapor phase epitaxy

M. Akiyama, H. Kakinuma, 1997 .

Chapter 3: Enhancement of Crystallization of Hydrogenated Amorphous Silicon by A

H. Fritzsche, O. Awadelkarim, J. Sturm, 2022 .

Reduction of threading dislocations in GaAs on Si by the use of intermediate GaAs buffer layers prepared under high V–III ratios

Ueda Takashi, C. Yamagishi, H. Kakinuma, 1999 .

A computer program for automated diagnosis of organic acidurias by GC/MS.

H. Yamashita, T. Nishimuta, H. Kakinuma, 1986 .