C. Hill

发表

Role of the ferroelastic strain in the optical absorption of BiVO4

M. Guennou, M. Fiebig, J. Kreisel, 2020, APL Materials.

Microstructure, impurity content and critical current density in Nb3Sn

P. B. Hart, C. Hill, R Ogden, 1969 .

3D characterization of a W/TiN/ Ti/Si contact structure using MULSAM

I. R. Barkshire, M. Prutton, D. K. Skinner, 1998 .

A Computer Model for Pulsed Laser Heating of Device Structures

A. C. Hill, C. Hill, D. J. Godfrey, 1981 .

Kinetics and Microstructure of Transiently Annealed Implanted Polycrystalline Silicon Layers

H. Ahmed, P. Timans, R. Mcmahon, 1989 .

Recrystallisation of amorphous silicon films by rapid isothermal and transient annealing

P. Dobson, J. Logan, C. Hill, 1988 .

Laser Annealing of Semiconductor Devices

C. Hill, 1983 .

New contact resistance profiling method for the assessment of III--V alloy multilayer structures

A. Carter, R. Goodfellow, C. Hill, 1978 .

Two‐dimensional profiling of large tilt angle, low energy boron implanted structure using secondary‐ion mass spectrometry

M. Dowsett, G. Cooke, C. Hill, 1996 .

Strategies for shallow junction and profile formation

C. Hill, 1992 .

A new model for the diffusion of arsenic in polycrystalline silicon

John R. King, Anthony O'Neill, Colin P. Please, 1988 .

LETTER TO THE EDITOR: The evolution and disappearance of the dislocation loops associated with pre-amorphisation

J. Thornton, C. Hill, 1989 .

Shallow junctions by ion implantation and rapid thermal annealing

C. Hill, 1987 .

Modelling Diffusion in and From Polysilicon Layers

C. Hill, S. K. Jones, C. Hill, 1990 .

Rapid Thermal Annealing - Theory and Practice

C. Hill, S. K. Jones, S K Jones, 1989 .