P. Kwaśnicki

发表

IIIrd Generation Solar Cell

P. Kwaśnicki, 2021 .

Determining the Effectiveness of Street Cleaning with the Use of Decision Analysis and Research on the Reduction in Chloride in Waste

K. Gaska, J. Ciuła, A. Generowicz, 2022, Energies.

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

L. Konczewicz, S. Juillaguet, J. Camassel, 2014 .

Raman Investigation of Aluminum-Doped 4H-SiC

L. Konczewicz, S. Juillaguet, J. Camassel, 2013 .

Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition

H. B. Weber, G. Ferro, T. Chassagne, 2016 .

Theoretical Study of the Electron Transport through Aromatic Molecular Wires with Different Aromatic Rings

P. Kwaśnicki, M. Inglot, 2017 .

Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers

T. Chassagne, M. Portail, A. Michon, 2014 .

Nitrogen Incorporation during Seeded Sublimation Growth of 4H-SiC and 6H-SiC

D. Chaussende, E. Sarigiannidou, S. Juillaguet, 2015 .

Magnetron Sputtered Electron Blocking Layer as an Efficient Method to Improve Dye-Sensitized Solar Cell Performance

J. Rysz, P. Kwaśnicki, Dariusz Augustowski, 2020, Energies.

Efficiency Boost in Dye-Sensitized Solar Cells by Post- Annealing UV-Ozone Treatment of TiO2 Mesoporous Layer

J. Rysz, P. Kwaśnicki, M. Gala, 2021, Materials.

Influence of Site Competition Effects on Dopant Incorporation during Chemical Vapor Deposition of 4H-SiC Epitaxial Layers

T. Chassagne, M. Portail, A. Michon, 2015 .

Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition

G. Ferro, J. Pezoldt, S. Juillaguet, 2014, 1407.3222.

Ge Addition during 4H-SiC Epitaxial Growth by CVD: Mechanism of Incorporation

G. Ferro, J. Pezoldt, F. Cauwet, 2015 .

Characterization of Ge-Doped Homoepitaxial Layers Grown by Chemical Vapor Deposition

H. B. Weber, G. Ferro, M. Krieger, 2014 .

p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum

T. Chassagne, M. Portail, A. Michon, 2016 .

Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy

S. Juillaguet, R. Arvinte, M. Zielinski, 2015 .

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

T. Chassagne, L. Konczewicz, S. Juillaguet, 2016 .

Optical Investigation of 3C-SiC Hetero-Epitaxial Layers Grown by Sublimation Epitaxy under Gas Atmosphere

M. Syväjärvi, V. Jokubavičius, S. Juillaguet, 2014 .

Determination of carrier lifetime and diffusion length in Al-doped 4H–SiC epilayers by time-resolved optical techniques

K. Jarašiūnas, R. Arvinte, M. Zielinski, 2015 .

Designing Antennas for RFID Sensors in Monitoring Parameters of Photovoltaic Panels

Mariusz Węglarski, Piotr Jankowski-Mihułowicz, Mateusz Chamera, 2020, Micromachines.

Optical Characterization of p-Type 4H-SiC Epilayers

K. Jarašiūnas, S. Juillaguet, R. Arvinte, 2015 .

Characterization techniques of sandwich-type TiO2/QD composites for low-cost quantum dots' solar cell

P. Kardasz, P. Kwaśnicki, M. Inglot, 2019, Opto-Electronics Review.