D. Field

发表

Is electronic spin angular momentum conserved in gas-surface interactions? F and F + with Si(100)

A. Hydes, D. Klemperer, D. Field, 1986 .

Spectroscopic studies of fluorescent emission in plasma etching of Si and SiO2 and the mechanism of gas-surface interactions

A. Hydes, D. Klemperer, D. Field, 1984 .

Spatially resolved optical spectroscopy of plasma etching systems

A. Hydes, D. Klemperer, D. Field, 1984 .

Optical spectroscopic study of mechanisms in CCl4 plasma etching of Si

D. Klemperer, D. Field, P. Clarke, 1990 .

Plasma processing of materials

P. May, D. Klemperer, D. Field, 1993 .

Monte Carlo simulations of electron distributions in the sheath region of reactive‐ion‐etching plasmas

P. May, D. Klemperer, D. Field, 1993 .

Modeling radio‐frequency discharges: Effects of collisions upon ion and neutral particle energy distributions

P. May, D. Klemperer, D. Field, 1992 .

Etch diagnostics for new III–V and other semiconductors

A. Day, D. Klemperer, D. Field, 1990 .

Electrical potentials in RF discharges

D. Klemperer, D. Field, Y. Song, 1990 .

Mass spectrometric studies of plasma etching of silicon nitride

A. Hydes, M. Seakins, D. Klemperer, 1985 .

Spatially resolved optical spectroscopy of plasma etching systems

A. Hydes, D. Klemperer, D. Field, 1984 .