G. Pant

发表

Tetragonal Phase Stabilization by Doping as an Enabler of Thermally Stable HfO2 based MIM and MIS Capacitors for sub 50nm Deep Trench DRAM

P. Kirsch, S. Kudelka, J. Heitmann, 2006, 2006 International Electron Devices Meeting.

Effect of poly (3-hexylthiophene) film thickness on organic thin film transistor properties

R. Wallace, B. Gnade, S. Gowrisanker, 2006 .

Relationship of HfO2 Material Properties and Transistor Performance

P. Kirsch, J. Peterson, B. Lee, 2006, 2006 International Symposium on VLSI Technology, Systems, and Applications.

Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

R. Wallace, B. Gnade, G. Soares, 2004 .

Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics

R. Wallace, B. Gnade, G. Soares, 2005 .

Mobility and charge trapping comparison for crystalline and amorphous HfON and HfSiON gate dielectrics

P. Kirsch, B. Lee, M. J. Kim, 2006 .

Stabilization of higher-κ tetragonal HfO2 by SiO2 admixture enabling thermally stable metal-insulator-metal capacitors

P. Kirsch, B. Lee, J. Heitmann, 2007 .

Gate induced leakage and drain current offset in organic thin film transistors

R. Wallace, B. Gnade, H. Jia, 2006 .

Low-temperature deposition of hafnium silicate gate dielectrics

R. Wallace, B. Gnade, M. Quevedo-López, 2004, IEEE Journal of Selected Topics in Quantum Electronics.

Growth and characterization of hafnium silicate films prepared by UV/ozone oxidation

M. J. Kim, R. Wallace, B. Gnade, 2004 .

Hafnium silicate formation by ultra-violet/ozone oxidation of hafnium silicide

M. J. Kim, R. Wallace, B. Gnade, 2003 .

Low temperature UV/ozone oxidation formation of HfSiON gate dielectric

M. J. Kim, R. Wallace, B. Gnade, 2004 .

STUDY OF GATE ELECTRODE MATERIALS ON HIGH-K DIELECTRICS Chun Yao Problem in Lieu of Thesis Prepared for the Degree of MASTER OF SCIENCE UNIVERSITY OF NORTH TEXAS August 2003 APPROVED:

R. Wallace, B. Gnade, D. Cha, 2003 .

Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics

G. Pant, Robert M. Wallace, Bruce E. Gnade, 2006 .

Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability

G. Bersuker, P. Kirsch, A. Kingon, 2006, 2006 International Electron Devices Meeting.

Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability

G. Pant, Robert M. Wallace, S. A. Krishnan, 2005 .

High performance gate first HfSiON dielectric satisfying 45nm node requirements

G. Pant, B.H. Lee, C. Huffman, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..