Jiangkai Zuo

Characterization of onset tunneling voltage (Vonset) walkout in high-voltage deep trench isolation on SOI

Thuy Dao, Mu-Ling Ger, Jiangkai Zuo, 2015, 2015 International Conference on IC Design & Technology (ICICDT).

Approach to the silicon limit: Advanced NLDMOS in 0.13 μm SOI technology for automotive and industrial applications up to 110V

Pete Rodriquez, Zhihong Zhang, Jiangkai Zuo, 2013, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).