M. Lagadas

Comparative investigation of MBE and MOCVD PMHEMT structures for high frequency applications

K. Michelakis, M. Kayambaki, P. Panayotatos, 1999 .

Millimeter-wave passive circuit elements based on GaAs micromachining

Mircea Dragoman, George Konstantinidis, D. Vasilache, 2005 .

XRD and Raman studies of low-temperature-grown GaAs epilayers

Z. Hatzopoulos, E. Anastassakis, Y. S. Raptis, 1993 .

Investigation of low temperature (LT) layers of GaAs grown by MBE : comparison of MESFET and HEMT performance

Z. Hatzopoulos, K. Tsagaraki, A. Christou, 1993 .

Lattice mismatch and conductivity in LTAIGaAs layers

Z. Hatzopoulos, M. Androulidaki, A. Christou, 1998 .

Electrical properties of n-GaAs epilayers, FET and HEMT structures grown on LT-GaAs by MBE

Z. Hatzopoulos, M. Androulidaki, A. Christou, 1997 .

Pressure Ratio (P As /P Ga ) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE

Z. Hatzopoulos, A. Christou, M. Calamiotou, 1993 .

Micromachined filters for 38 and 77 GHz supported on thin membranes

Pierre Blondy, Giancarlo Bartolucci, D. Dascalu, 2001 .

GaAs membrane supported millimeter wave circuits

Robert Plana, L. Bary, D. Vasilache, 2003, 2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676).

Deposition, evaluation and control of 4H and 6H SiC epitaxial layers for device applications

J. Bluet, E. Neyret, D. Anglos, 2001 .