Ruiping Xu

Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature*

Tangsheng Chen, Yuehang Xu, Jianjun Zhou, 2021, Chinese Physics B.

Theoretical analysis on O vacancy and cation inversion in NiCo2O4

D. Hou, Chunfang Wu, Kaiqiang Zhang, 2021 .

Central peak and narrow component in x-ray scattering near the displacive phase transition in SrTi0.

M. Holt, R. Xu, H. Hong, 2008 .

Effects of terminated atoms, porosity and drilling orientations on the band structure of porous silicon

Ying Wu, D. Hou, Kaiqiang Zhang, 2017 .