T. Bi

Oxidized Si terminated diamond and its MOSFET operation with SiO2 gate insulator

H. Kawarada, M. Iwataki, Wenxi Fei, 2020 .

Application of 2DHG Diamond p-FET in Cascode With Normally-OFF Operation and a Breakdown Voltage of Over 1.7 kV

H. Kawarada, M. Inaba, Toshio Sasaki, 2020, IEEE Transactions on Electron Devices.

Feasibility Study of TiOx Encapsulation of Diamond Solution‐Gate Field‐Effect Transistor Metal Contacts for Miniature Biosensor Applications

Y. H. Chang, H. Kawarada, A. A. Manaf, 2020, physica status solidi (a).

C-Si Interface on Sio2/(111) Diamond P-Mosfets with High Mobility and Excellent Normally-Off Operation

H. Kawarada, Jinlong Liu, Chengming Li, 2022, SSRN Electronic Journal.

C–Si bonded two-dimensional hole gas diamond MOSFET with normally-off operation and wide temperature range stability

H. Kawarada, M. Iwataki, A. Morishita, 2021 .

Evolution of growth characteristics around the junction in the mosaic diamond

H. Kawarada, Jinlong Liu, Junjun Wei, 2021, Diamond and related materials.

MOSFETs on (110) C–H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

H. Kawarada, B. Dai, Jiaqi Zhu, 2022, IEEE Transactions on Electron Devices.

Erratum: Oxidized Si terminated diamond and its MOSFET operation with SiO2gate insulator (Applied Physics Letters (2020) 116 (212103) DOI: 10.1063/1.5143982)

H. Kawarada, M. Iwataki, Wenxi Fei, 2020 .