Christopher Prohl

发表

Atomic structure and stoichiometry of In(Ga)As/GaAs quantum dots grown on an exact-oriented GaP/Si(001) substrate

M. Lee, S. Bank, Xue Huang, 2016 .

Growth and electronic properties of Tb silicide layers on Si(111)

M. Franz, J. Große, M. Dähne, 2016 .

Atomic structure and strain of the InAs wetting layer growing on GaAs(001)-c(4×4)

H. Eisele, M. Dähne, Christopher Prohl, 2010 .

Evolution of the InAs wetting layer on GaAs(001)-c(4×4) on the atomic scale

H. Eisele, M. Dähne, Christopher Prohl, 2009 .

Spatial structure of In0.25Ga0.75As/GaAs/GaP quantum dots on the atomic scale

H. Eisele, A. Strittmatter, D. Bimberg, 2013 .

Atomic structure of the (4 × 3) reconstructed InGaAs monolayer on GaAs(0 0 1)

H. Eisele, M. Dähne, Christopher Prohl, 2010 .

Electronic properties of dysprosium silicide nanowires on Si(557)

J. Riley, P. Stojanov, M. Franz, 2010 .

Energy surfaces of rare-earth silicide films on Si( 1 1 1)

J. Riley, P. Stojanov, M. Franz, 2009 .

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

H. Eisele, A. Strittmatter, A. Schliwa, 2012 .

Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si(001)

P. Kleinschmidt, H. Döscher, T. Hannappel, 2016 .