A. Y. Polyakov

发表

GaN as a detector of α-particles and neutrons

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, 2011, OPTO.

Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe

David P. Norton, John M. Zavada, Stephen J. Pearton, 2004 .

On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy

Jaime A. Freitas, David W. Greve, Marek Skowronski, 1996 .

Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

David W. Greve, Marek Skowronski, A. Y. Polyakov, 1998 .

Gallium antimonide device related properties

A. G. Milnes, A. Y. Polyakov, A. Milnes, 1993 .

Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO

David P. Norton, John M. Zavada, Stephen J. Pearton, 2003 .

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, 1998 .

Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layers

Stephen J. Pearton, A. Y. Polyakov, N. B. Smirnov, 2006 .

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .