Sooyeon Bae

Widely tunable lasing with lowered threshold in a two-dimensional indium-tin-oxide distributed-feedback structure

N. Y. Ha, T. Park, Sooyeon Bae, 2016 .

Synergic Strategies of Composition-Modified Bilayer Channel Configuration and Ozone-Processed Gate Stacks for Atomic-Layer Deposited In-Ga-Zn-O Thin-Film Transistors

Nak-Jin Seong, Sung‐Min Yoon, Kyujeong Choi, 2022, SSRN Electronic Journal.

Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.

Jong-Heon Yang, C. Hwang, Nak-Jin Seong, 2022, ACS applied materials & interfaces.

Combination of InZnO/InGaZnO Bi-layered channels prepared by atomic layer deposition and ozone-based gate-stack formation for guaranteeing high field-effect mobility and long-term stability of thin film transistors

Nak-Jin Seong, Sung‐Min Yoon, S. Moon, 2022, Ceramics International.

Characterization of nanoscale vertical-channel charge-trap memory thin film transistors using oxide semiconducting active and trap layers

G. Kim, Nak-Jin Seong, Sung‐Min Yoon, 2021, Journal of Vacuum Science & Technology B.

Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions

Jong-Heon Yang, C. Hwang, Sung‐Min Yoon, 2021, IEEE Transactions on Electron Devices.