S. Gaillard

Type-I quantum-well VCSEL structure on GaSb emitting in the 2-2.5 /spl mu/m range

L. Cerutti, E. Picard, D. Romanini, 2002 .

Electrical model for high-power-density laser diodes.

J. Arnaud, S. Gaillard, Y. Vidal, 1994, Applied optics.

Electroreflectance of stressed germanium

E. Monteil, A. Joullie, C. Alibert, 1973 .

Optical properties of GaSb/Ga0.69Al0.31Sb single quantum wells grown by molecular beam epitaxy

A. Rocher, C. Raisin, C. Alibert, 1990 .

Electronic states and thicknesses of GaAs/GaAlAs quantum wells as measured by electroreflectance and spectroscopic ellipsometry

M. Erman, J. Theeten, P. Frijlink, 1984 .

Trace gas detection with antimonide-based quantum-well diode lasers.

A. Vicet, Y. Rouillard, A. Baranov, 2002, Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy.

Low-temperature franz-keldysh oscillations in uniaxially stressed germanium

A. Joullie, C. Alibert, S. Gaillard, 1973 .

Measurements of electric-field-induced energy-level shifts in GaAs single-quantum-wells using electroreflectance

G. Bastard, M. Erman, J. Brum, 1985 .