M. Cruz

Dual channel FinFETs as a single high-k/metal gate solution beyond 22nm node

R. Jammy, P. D. Kirsch, P. Majhi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Growth mechanism of TiN film on dielectric films and the effects on the work function

Husam N. Alshareef, Hongfa Luan, Kisik Choi, 2005 .

Gate first high-k/metal gate stacks with zero SiOx interface achieving EOT=0.59nm for 16nm application

G. Bersuker, R. Jammy, P. Majhi, 2006, 2009 Symposium on VLSI Technology.

Additive Process Induced Strain (APIS) Technology for L g = 30nm Band-Edge High-k/Metal Gate nMOSFET

P. Kirsch, S. Suthram, R. Jammy, 2008 .

A scalable and highly manufacturable single metal gate/high-k CMOS integration for sub-32nm technology for LSTP applications

D. Gilmer, G. Bersuker, P. Kirsch, 2006, 2009 Symposium on VLSI Technology.