A. Aseev

发表

Conductance oscillations near bonded interface in the ultra thin silicon-on-insulator layers at room temperature

V. Popov, I. Antonova, O. Naumova, 2003 .

Modification of silicon-on-insulator structures under nano-scale device fabrication

V. Popov, I. Antonova, T. Gavrilova, 2003 .

LWIR Photodiodes and Focal Plane Arrays Based on Novel HgCdTe/CdZnTe/GaAs Heterostructures Grown by MBE Technique

Yu. G. Sidorov, V. Vasiliev, I. Sabinina, 2012 .

SOI nanowire transistor for detection of D-NFATc1 molecules

K. A. Malsagova, B. I. Fomin, I. D. Shumov, 2013 .

Indication of the coronavirus model particles using a nanowire biosensor

B. Zaitsev, G. Buryak, V. Generalov, 2020 .

Gene‐centric view on the human proteome project: The example of the Russian roadmap for chromosome 18

A. Makarov, A. Lisitsa, A. Grigoriev, 2011, Proteomics.

HgCdTe nanostructures on GaAs and Si substrate for IR and THz radiation detecting

Yu. G. Sidorov, V. Vasil’ev, I. Sabinina, 2012 .

CdHgTe-based nanostructures for photodetectors

V. A. Shvets, B. Wittmann, S. Ganichev, 2009 .

Atomic Structure of Semiconductor Low-Dimensional Heterosystems

A. Gutakovskii, A. Latyshev, A. Aseev, 2017 .

Spectroscopy of single InAs quantum dots

A. K. Kalagin, A. S. Jaroshevich, I. A. Derebezov, 2013 .

On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope

J. Vanhellemont, J. Landuyt, A. Gutakovskii, 1998 .

UHV reflection electron microscopy investigation of the monoatomic steps on the silicon (111) surface at homo- and heteroepitaxial growth

A. Latyshev, A. Aseev, A. Krasilnikov, 1997 .

In situ reflection electron microscope observation of two-dimensional nucleation on Si(111) during epitaxial growth

A. Latyshev, A. Aseev, A. Krasilnikov, 1996 .

Quantum interferential Y-junction switch

Z. Kvon, J. Portal, V. Tkachenko, 2012, Nanotechnology.

The deepness enhancing of an AFM-tip induced surface nanomodification

A. Latyshev, D. Sheglov, A. Aseev, 2005 .

Electron Beam Induced Changes of the Real Structure of Semiconductors

D. Hoehl, O. Pchelyakov, J. Heydenreich, 1979 .

Ellipsometric investigation of the mechanism of the formation of titanium oxynitride nanolayers

F. Dultsev, Yuri V. Nastaushev, S. Svitasheva, 2011 .

Dislocation processes during plastic deformation of Si and Ge in the range 0.50 to 0.95 of the melting temperature

S. Stenin, A. Aseev, Y. Golobokov, 1975 .

Silicon-on-insulator nanotransistors: Prospects and problems of fabrication

V. Popov, I. Antonova, T. Gavrilova, 2003 .

Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography

V. Popov, I. Antonova, T. Gavrilova, 2002 .

A new memory element based on silicon nanoclusters in a ZrO2 insulator with a high permittivity for electrically erasable read-only memory

Y. Novikov, V. Gritsenko, K. Nasyrov, 2005 .

FZ-Si crystal growth and HREM study of new types of extended defects during in situ electron irradiation

A. Gutakovskii, L. Fedina, A. Aseev, 2001 .

UHV-REM study of gold adsorption on the Si(111) surface

D. Nasimov, A. Latyshev, V. N. Savenko, 2000 .

Investigation of germanium films and GeSi interface structure by transmission electron microscopy

N. N. Soldatenko, Y. Tkhorik, S. Stenin, 1975 .

Intrinsic point defect clustering in Si: a study by HVEM and HREM in situ electron irradiation

J. Vanhellemont, J. Landuyt, A. Gutakovskii, 1997 .

Study of interaction of point defects with dislocations in silicon by means of irradiation in an electron microscope

L. Fedina, A. Aseev, 1986 .

UHV REM study of the anti-band structure on the vicinal Si(111) surface under heating by a direct electric current

A. Latyshev, A. Aseev, A. Krasilnikov, 1994 .

Atomic Processes on the Silicon Surface

D. Nasimov, S. Kosolobov, E. Rodyakina, 2017 .

Universality of the {113} Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

A. Gutakovskii, A. Latyshev, L. Fedina, 2017 .

Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope

A. Romano-Rodríguez, J. Vanhellemont, J. Landuyt, 1995 .

High resolution electron microscopy of semiconductor interfaces

A. Gutakovskii, L. Fedina, A. Aseev, 1995 .

Observation of vacancy clustering in Si crystals during in situ electron irradiation in a high voltage electron microscope

J. Vanhellemont, J. Landuyt, L. Fedina, 1995 .

Studies of the interaction of dislocations with point defects in germanium by means of irradiation in a high‐voltage electron microscope

D. Hoehl, H. Bartsch, A. Aseev, 1987 .

Analysis of rod‐like defects in silicon and germanium by means of high‐resolution electron microscopy

D. Hoehl, O. Pchelyakov, A. Aseev, 1983 .

Detection of marker miRNAs in plasma using SOI-NW biosensor

B. I. Fomin, I. D. Shumov, A. Archakov, 2018 .

Transformations on clean Si(111) stepped surface during sublimation

A. Latyshev, S. Stenin, A. Aseev, 1989 .

Reflection electron microscopy study of structural transformations on a clean silicon surface in sublimation, phase transition and homoepitaxy

A. Latyshev, S. Stenin, A. Aseev, 1990 .

Reflection electron microscopy study of clean Si(111) surface reconstruction during the (7 × 7) ⇔ (1 × 1) phase transition

A. Latyshev, L. Sokolov, S. Stenin, 1991 .

In situ study of the interaction of oxygen with the Si(111) surface by ultrahigh-vacuum reflection electron microscopy

A. Latyshev, S. Kosolobov, A. Aseev, 2001 .

SOI nanowire for the high-sensitive detection of HBsAg and α-fetoprotein.

I. D. Shumov, Alexander I Archakov, Alexander L Aseev, 2012, Lab on a chip.

Atomic Steps on a Single-Crystal Surface Studied With in Situ Uhv Reflection-Electron Microscopy

D. Nasimov, S. Kosolobov, V. N. Savenko, 2002 .

Direct UHV REM observation of the behaviour of monatomic steps on the silicon (111) surface

A. Latyshev, A. Aseev, A. Krasilnikov, 1994 .

Transformation of a Si(111) stepped surface during the formation of a Si(3×1)Ca superstructure

A. Latyshev, A. Aseev, A. Krasilnikov, 1993 .

In situ REM study of monatomic step behaviour on Si(111) surface during sublimation

A. Latyshev, A. Aseev, A. Krasilnikov, 1993 .

Initial stages of silicon homoepitaxy studied by in situ reflection electron microscopy

A. Latyshev, S. Stenin, A. Aseev, 1989 .

Direct REM observation of structural processes on clean silicon surfaces during sublimation, phase transition and epitaxy

A. Latyshev, A. Aseev, A. Krasilnikov, 1992 .

Peculiarities of step bunching on Si(001) surface induced by DC heating

A. Latyshev, L. Litvin, A. Aseev, 1998 .

Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxy

A. Latyshev, S. Stenin, A. Aseev, 1992 .

20-nm Resolution of electron lithography for the nano-devices on ultrathin SOI film

V. Popov, L. A. Nenasheva, M. M. Kachanova, 2002 .

Challenges of the Human Proteome Project: 10-year Experience of the Russian Consortium.

Anatoly I Grigoriev, Arthur T Kopylov, Victor G Zgoda, 2019, Journal of proteome research.

Spectroscopy of Single AlInAs Quantum Dots

I. A. Derebezov, A. Kozhukhov, A. Toropov, 2018 .

Two-band conduction in TiO2

V. Atuchin, O. Pchelyakov, V. Gritsenko, 2006 .

Introscopy in nano- and mesoscopic physics: Single electronics and quantum ballistics

Z. Kvon, V. Tkachenko, O. Tkachenko, 2016 .

Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

Z. Kvon, D. Sheglov, V. Tkachenko, 2017 .

Coulomb Interaction of Triangular Quantum Dots in a Small Ring Interferometer

A. Latyshev, J. Portal, O. Estibals, 2003 .

CONFERENCES AND SYMPOSIA: One-electron transistors based on Coulomb blockade and quantum interference

Z. Kvon, L. Litvin, V. Tkachenko, 1999 .

A new low voltage fast SONOS memory with high-k dielectric

Jo-Won Lee, K. A. Nasyrov, V. A. Gritsenko, 2003 .

Formation and Motion of Dislocations in the Crystallization Process of Selenium from the Amorphous Phase

S. Stenin, A. Aseev, O. Vasin, 1972, March 16.

Formation of dislocation structure in silicon layers on non‐orienting substrates

A. G. Klimenko, S. Meyer, S. Stenin, 1975 .

SOI-Nanowire Biosensors for High-Sensitivity Protein and Gene Detection

A. Archakov, Y. Ivanov, V. Popov, 2014 .

SOI-FET Sensors with Dielectrophoretic Concentration of Viruses and Proteins

G. Buryak, N. Rudometova, A. Latyshev, 2022, Biosensors.

Molecular-beam epitaxy-grown Si whisker structures: morphological, optical and electrical properties

P. Werner, F. Dultsev, T. Gavrilova, 2008, Nanotechnology.

Superminiature Radiation Sources Based on Semiconductor Nanostructures

A. K. Kalagin, V. Entin, I. Ryabtsev, 2017 .

Investigating processes for forming an infrared CdHgTe-based photodetector in a monolithic version

A. I. Kozlov, Yu. G. Sidorov, E. V. Degtyarev, 2009 .

Influence of the method of preparation on the structure and properties of Ge-GaAs heterojunctions

S. Stenin, V. Shumsky, A. Aseev, 1976 .

MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Galina V. Chekanova, Mikhail S. Nikitin, Ivan Yu. Lartsev, 2005, SPIE Optical Systems Design.