A. Seki

发表

Epitaxial growth of InP on Si by OMVPE — defect reduction in epitaxial InP using InAsxP1−xInP superlattices

M. Koba, J. Kudo, A. Seki, 1988 .

Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

S. Ohmagari, H. Umezawa, A. Chayahara, 2019, Applied Physics Letters.

MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer

M. Koba, J. Kudo, A. Seki, 1987 .

Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate

S. Shikata, T. Bessho, H. Umezawa, 2016 .

Vertical edge graphite layer on recovered diamond (001) after high‐dose ion implantation and high‐temperature annealing

H. Kawarada, A. Hiraiwa, Kazuaki Sato, 2017 .

Influence of Dislocations to the Diamond SBD Reverse Characteristics

S. Shikata, A. Seki, F. Kawai, 2017, Materials Science Forum.

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity

T. Bessho, K. Danno, A. Seki, 2014 .

Solution Growth on Concave Surface of 4H-SiC Crystal

K. Kamei, T. Bessho, K. Moriguchi, 2016 .

Vapor Growth of Al-Doped ZnTe by the Closed-Tube Method

M. Okazaki, N. Kitamura, M. Kakehi, 1985 .

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

K. Danno, H. Saitoh, A. Seki, 2010 .

Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

T. Kimoto, T. Bessho, K. Danno, 2012 .

Solubility and diffusion of chromium in 4H-SiC

T. Kimoto, T. Bessho, Kazuaki Sato, 2016 .

Diffusion and Gettering of Transition Metals in 4H-SiC

T. Kimoto, T. Bessho, K. Danno, 2012 .